The gate-to-source and gate-to-drain capacitance of long-and short-channel n-MOSFET's have been measured and simulated using a two-dimensional numerical simulator that allows different inversion layer carrier mobility models to be used. Comparison of the experimental and simulated data indicates velocity saturation effect is seen in the capacitance data of the short-channel devices. Transverse-field dependence of the mobility is also found to be necessary to account for the experimental data.

Measurement and numerical modeling of short-channel MOSFET gate capacitances

This paper presents a method for solving the one-dimensional (1-D) energy balance equation for fully depleted short-channel SOI MOSFET's. This method takes the exact kinetic energy into account and provides a new analytical solution for the non-saturated drain current region. The carrier temperature for spatially homogeneous case is described as a function of the longitudinal electric field and the carrier concentration deviation. The electron temperature is higher than that predicted by old models, which is examined by the two-dimensional simulation. The experimental data on gate current characteristics in short-channel SOI nMOSFET's can be physically interpreted by the proposed 1-D model. >

An improved analytical solution of energy balance equation for short-channel SOI MOSFET's and transverse-field-induced carrier heating

Direct capacitance measurements of small geometry MOS transistors

Capacitance-voltage measurements were performed on small-size MOSFET's with applied drain voltage to obtain information about hot-electron effects. The theoretical analysis shows that hot carriers cause remarkable changes 1) in the vertical and horizontal distribution of the electrons in the inversion layer, 2) in the surface potential drop, 3) in the depletion charge, and 4) in the effective threshold voltage. The influence of these hot-electron effects on the channel current is discussed.

G. Dorda

Papers

Novel hot-electron effects in the channel of MOSFET's observed by capacitance measurements