Transparent conductors—A status review

The surface and materials science of tin oxide

We review work on In2O3:Sn films prepared by reactive e‐beam evaporation of In2O3 with up to 9 mol % SnO2 onto heated glass. These films have excellent spectrally selective properties when the deposition rate is ∼0.2 nm/s, the substrate temperature is ≳150 °C, and the oxygen pressure is ∼5×10−4 Torr. Optimized coatings have crystallite dimensions ≳50 nm and a C‐type rare‐earth oxide structure. We cover electromagnetic properties as recorded by spectrophotometry in the 0.2–50‐μm range, by X‐band microwave reflectance, and by dc electrical measurements. Hall‐effect data are included. An increase of the Sn content is shown to have several important effects: the semiconductor band gap is shifted towards the ultraviolet, the luminous transmittance remains high, the infrared reflectance increases to a high value beyond a certain wavelength which shifts towards the visible, phonon‐induced infrared absorption bands vanish, the microwave reflectance goes up, and the dc resisitivity drops to ∼2×10−4 Ω cm. The corre...

Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows

The present state of the art of transparent, electrically conducting films, with special reference to In2O3, SnO2 and Cd2SnO4, has been reviewed. Various production techniques currently in use, and typical parameters used in the processes have been discussed in detail. Electrical and optical properties of these films have been reported as a function of various parameters, e.g. substrate temperature, doping, oxygen pressure, etc. Finally, the applications of these films in research and industry have been discussed in detail.

Semiconducting transparent thin films: their properties and applications

Graphene and two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant interest due to their unique properties that cannot be obtained in their bulk counterparts. These atomically thin 2D materials have demonstrated strong light–matter interactions, tunable optical bandgap structures and unique structural and electrical properties, rendering possible the high conversion efficiency of solar energy with a minimal amount of active absorber material. The isolated 2D monolayer can be stacked into arbitrary van der Waals (vdWs) heterostructures without the need to consider lattice matching. Several combinations of 2D/3D and 2D/2D materials have been assembled to create vdWs heterojunctions for photovoltaic (PV) and photoelectrochemical (PEC) energy conversion. However, the complex, less-constrained, and more environmentally vulnerable interface in a vdWs heterojunction is different from that of a conventional, epitaxially grown heterojunction, engendering new challenges for surface and interface engineering. In this review, the physics of band alignment, the chemistry of surface modification and the behavior of photoexcited charge transfer at the interface during PV and PEC processes will be discussed. We will present a survey of the recent progress and challenges of 2D/3D and 2D/2D vdWs heterojunctions, with emphasis on their applicability to PV and PEC devices. Finally, we will discuss emerging issues yet to be explored for 2D materials to achieve high solar energy conversion efficiency and possible strategies to improve their performance.

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

Physical properties of tin oxide films deposited by oxidation of SnCl2

Transparent electrically conducting SnO2 films were prepared by the chemical vapour deposition technique. The films were deposited at substrate temperatures of 400, 450 and 500 degrees C by stannous chloride oxidation. The optical absorption studies, using unpolarised light, indicated that the deposition temperature is an important parameter influencing the optical properties of the films. The absorption edge for the films occurs at about 3.7 eV. The films also indicated direct transitions at about 3.95 eV and indirect transitions at about 3.27 eV.

https://iopscience.iop.org/article/10.1088/0022-3727/14/5/025/pdf

Optical absorption studies on tin oxide films

X-ray and electron diffraction studies of chemically vapour-deposited tin oxide films

Transparent electrically conducting SnO2 films were prepared by chemical vapour deposition technique The films were obtained at various deposition temperature ranging from 350 to 500 degrees C by stannous chloride oxidation The SnO2 films thus produced have a conductivity of 50-700 (ohm cm)-1, an n-type carrier concentration of 1*1019-6*1020 cm-3 and a Hall mobility of 78-312 V-1 s-1 depending on the deposition conditions The studies on the variation of conductivity with temperature indicated two donor activation energies for the films

G.K. Bhagavat

Papers

Physical properties of tin oxide films deposited by oxidation of SnCl2

Optical absorption studies on tin oxide films

X-ray and electron diffraction studies of chemically vapour-deposited tin oxide films

Chemical vapour deposition of tin oxide films and their electrical properties

Electrical and photovoltaic properties of tin oxide-silicon heterojunctions