G
G. Luka
Researcher at Polish Academy of Sciences
Publications - 49
Citations - 1007
G. Luka is an academic researcher from Polish Academy of Sciences. The author has contributed to research in topics: Atomic layer deposition & Layer (electronics). The author has an hindex of 16, co-authored 49 publications receiving 883 citations.
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Journal ArticleDOI
ALD grown zinc oxide with controllable electrical properties
Elzbieta Guziewicz,Marek Godlewski,Lukasz Wachnicki,Tomasz A. Krajewski,G. Luka,Sylwia Gieraltowska,Rafal Jakiela,A. Stonert,Wojciech Lisowski,M. Krawczyk,Janusz W. Sobczak,Aleksander Jablonski +11 more
TL;DR: In this article, the electrical properties of ZnO-based p-n and Schottky junctions are discussed and a rectification ratio high enough to fulfill requirements of 3D memories is demonstrated.
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Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications
G. Luka,Tomasz A. Krajewski,Bartlomiej S. Witkowski,G. Wisz,I. S. Virt,I. S. Virt,Elzbieta Guziewicz,Marek Godlewski +7 more
TL;DR: In this article, the authors obtained zinc oxide films doped with aluminum using atomic layer deposition (ALD) and analyzed their morphology, growth mode, optical and electrical properties, including conductivity versus temperature measurements.
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Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications
E. Katsia,N. Huby,Grazia Tallarida,B. Kutrzeba-Kotowska,Michele Perego,S. Ferrari,Frederik C. Krebs,Elzbieta Guziewicz,Marek Godlewski,V. Osinniy,G. Luka +10 more
TL;DR: In this article, a low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2.
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Characteristics of organic light emitting diodes with copper iodide as injection layer
Pavlo Stakhira,Vladyslav Cherpak,D. Volynyuk,F. Ivastchyshyn,Zenon Hotra,Zenon Hotra,V. Tataryn,G. Luka +7 more
TL;DR: In this paper, the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3) was studied.
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Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition
G. Luka,Tomasz A. Krajewski,Lukasz Wachnicki,Bartlomiej S. Witkowski,E. Lusakowska,W. Paszkowicz,Elzbieta Guziewicz,Marek Godlewski +7 more
TL;DR: In this paper, two hundred-nano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240 °C, and the results showed that the high electrical conductivity was achieved by playing with the sample stoichiometry and growth conditions.