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Computer-aided analysis of electronic circuits: Algorithms and computational techniques

Major growth in the image sensor market is largely as a result of the expansion of digital imaging into cameras, whether stand-alone or integrated within smart cellular phones or automotive vehicles. Applications in biomedicine, education, environmental monitoring, optical communications, pharmaceutics and machine vision are also driving the development of imaging technologies. Organic photodiodes (OPDs) are now being investigated for existing imaging technologies, as their properties make them interesting candidates for these applications. OPDs offer cheaper processing methods, devices that are light, flexible and compatible with large (or small) areas, and the ability to tune the photophysical and optoelectronic properties − both at a material and device level. Although the concept of OPDs has been around for some time, it is only relatively recently that significant progress has been made, with their performance now reaching the point that they are beginning to rival their inorganic counterparts in a number of performance criteria including the linear dynamic range, detectivity, and color selectivity. This review covers the progress made in the OPD field, describing their development as well as the challenges and opportunities.

Organic Photodiodes: The Future of Full Color Detection and Image Sensing

Perovskite photodetectors (PPDs), which combine the advantages of perovskite semiconductor materials with superior optical and electronic properties and solution-processed manufacturing, have emerged as a new class of revolutionary optoelectronic devices with potential for various practical applications. Encouraged by the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of perovskite materials with interesting optoelectronic properties, increasing research attention is focused on the development of high performance PPDs. In this review, the recent progress on emerging PPDs is comprehensively summarized from the perspective of device physics and materials science. The strategies for extending the spectral response range of PPDs and improving the performance of devices are investigated. Furthermore, the methods for realizing narrowband photodetectors are also discussed, where filter-free and self-filter narrowband PPDs are achieved based on the concept of charge collection narrowing. Meanwhile, the promising future directions in this research field are proposed and discussed, including multifunctional PPDs, perovskite–organic hybrid photodetectors, flexible and transparent PPDs, self-powered PPDs, and photodetector systems and arrays. This review provides valuable insights into the current status of highly sensitive PPDs and will spur the design of new structures and devices to further enhance their photo-detection performances and meet the need of versatility in practical application.

Recent progress on highly sensitive perovskite photodetectors

Recent Progress on Photomultiplication Type Organic Photodetectors

As important opto-electronical devices, nanofilm photodetectors constructed from inorganic low-dimensional nanostructures have drawn prime attention due to their significance in basic scientific research and potential technological applications. This review highlights a selection of important topics pertinent to inorganic nanofilm photodetectors processed via solution strategies. This article begins with a description of the advantages and drawbacks of nanofilm-based photodetectors versus 1D nanostructure-based ones, and then introduces rational design and controlled syntheses of various nanofilms via different wet-chemical routes, and then mainly focuses on their optoelectronic properties and applications in photodetectors based on the different types of nanofilms. Finally, the general challenges and the potential future directions of this exciting research and technology area are presented.

Recent advances in solution-processed inorganic nanofilm photodetectors

Intrinsic Noise.- Fundamental Concepts.- Physical Noise Sources.- Noise Parameters.- Noise Analysis of Linear Circuits.- Frequency Domain Noise Analysis of Linear Multiports.- Noise Models of Electronic Devices.- Interfering Signals.- External Noise.- Interference Reduction Methods.- Methods of Reducing Emission of Interfering Signals.- Interconnection Modeling and Crosstalk.- Methods of Increasing Immunity to Interfering Signals.- Case Studies.- Low-Noise Circuit Design.- Noise Performance Measurement.- Noise in Sensing Circuits.- Noise in Communication Systems.- Computer-Aided Noise Analysis.- Protection Against Interfering Signals.

Electronic Noise and Interfering Signals: Principles and Applications

A new procedure to determine the noise parameters of a linear two-port from a set of experimental data is introduced. It consists in directly solving a system of four nonlinear equations instead of using a least-squares fit or casting the original equations in a form that is linear with respect to the four noise parameters. The proposed symbolic solution provides insight in error analysis. This method is compared with Minimax optimisation performed on an experimental set of noise figures measured for nine different source admittances.

Exact computation of two-port noise parameters

A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.

https://www.mdpi.com/1424-8220/8/10/6566/pdf?view=inline

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

This paper presents a new recursive method to compute the higher order sensitivities of any node voltage, as well as of the circuit performances (gain, input/output impedance, or reflection coefficients) with respect to all circuit parameters. The starting point is the adjoint system approach and the expressions obtained for the first-order sensitivities when using nodal analysis. Instead of further differentiating them, the images of the higher order derivatives are generated by recursion up to any given order. The procedure is illustrated with three examples.

A fully recursive approach to the computation of higher order sensitivities of linear active circuits

The authors consider the computation of the second- and third-order sensitivities of microwave circuits, which opens the field to optimisation via Newton's method. Definitions of higher-order relative sensitivities are introduced, together with a criterion to select 'hot' sensitivities. >

G. Vasilescu

Papers

Electronic Noise and Interfering Signals: Principles and Applications

Exact computation of two-port noise parameters

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

A fully recursive approach to the computation of higher order sensitivities of linear active circuits

Second-and third-order sensitivities of microwave circuits