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Ganpati Ramanath

Researcher at Rensselaer Polytechnic Institute

Publications -  90
Citations -  4626

Ganpati Ramanath is an academic researcher from Rensselaer Polytechnic Institute. The author has contributed to research in topics: Thermoelectric effect & Seebeck coefficient. The author has an hindex of 30, co-authored 83 publications receiving 4161 citations. Previous affiliations of Ganpati Ramanath include University of Illinois at Urbana–Champaign & Linköping University.

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Size-Dependent Melting Properties of Small Tin Particles: Nanocalorimetric Measurements.

TL;DR: The latent heat of fusion for Sn particles formed by evaporation on inert substrate with radii ranging from 5 to 50 nm has been measured directly using a novel scanning nanocalorimeter and a particle-size-dependent reduction of $\ensuremath{\Delta}{H}_{m}$ has been observed.
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A new class of doped nanobulk high-figure-of-merit thermoelectrics by scalable bottom-up assembly

TL;DR: A new class of both p- and n-type bulk nanomaterials with room-temperature ZT as high as 1.1 is demonstrated using a combination of sub-atomic-per-cent doping and nanostructuring to address the challenge of obtaining thermoelectric materials with high figure of merit ZT in thin films.
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Al-doped zinc oxide nanocomposites with enhanced thermoelectric properties.

TL;DR: Al-containing ZnO nanocomposites are reported with up to a factor of 20 lower κ(L) than non-nanostructured ZNO, while retaining bulklike α and σ, and holds promise for engineering advanced oxide-based high-ZT thermoelectrics for applications.
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Bonding-induced thermal conductance enhancement at inorganic heterointerfaces using nanomolecular monolayers

TL;DR: The use of a strongly bonding organic nanomolecular monolayer at model metal/dielectric interfaces is demonstrated to obtain up to a fourfold increase in the interfacial thermal conductance, to values as high as 430 MW m(-2) K(-1) in the copper-silica system.
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Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films

TL;DR: In this article, Namba's model that uses the measured surface roughness provides the best description of the resistivity-thickness behavior in sub-40-nm thick Cu films.