G
Gary E. Bulman
Researcher at Research Triangle Park
Publications - 6
Citations - 174
Gary E. Bulman is an academic researcher from Research Triangle Park. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric generator. The author has an hindex of 3, co-authored 6 publications receiving 130 citations.
Papers
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Journal ArticleDOI
Superlattice-based thin-film thermoelectric modules with high cooling fluxes
Gary E. Bulman,Phil Barletta,Jay Lewis,Nicholas Baldasaro,Michael Manno,Avram Bar-Cohen,Bao Yang +6 more
TL;DR: It is shown that cooling fluxes of 258 W cm−2 can be achieved in thin-film Bi2Te3-based superlattice thermoelectric modules, which will have far-reaching impacts in diverse applications, such as advanced computer processors, radio-frequency power devices, quantum cascade lasers and DNA micro-arrays.
Journal ArticleDOI
Three-Stage Thin-Film Superlattice Thermoelectric Multistage Microcoolers with a ΔTmax of 102 K
TL;DR: In this article, the authors describe a multistage superlattice thermoelectric (TE) cooling technology that can provide useful microcooling cold-side temperatures of 200 K.
Patent
Nanoscale, ultra-thin films for excellent thermoelectric figure of merit
Rama Venkatasubramanian,Phillip Barletta,Bryson Quilliams,Geza Dezsi,T.S. Colpitts,Gary E. Bulman,Judy Stuart +6 more
TL;DR: In this paper, a thermoelectric structure including a semi-insulating material having a thickness less than 50 nm and a polysilicon material in electrical contact with the thermoconducting material was proposed.
Journal ArticleDOI
Metallorganic chemical vapor deposition of InAs/GaSb superlattices on GaAs substrates using a two-step InAs buffer layer
TL;DR: In this paper, the InAs/GaSb type II superlattices (T2SLs) were grown heteroepitaxially, via metallorganic chemical vapor deposition (MOCVD), on GaAs substrates.
Journal ArticleDOI
Investigation into the thermoelectric properties of GaSb/InAs superlattice structures
TL;DR: In this paper, the authors investigated the use of III-V superlattice structures for thermoelectric (TE) applications and obtained a maximum ZT of 0.36 at 400K for optimally doped n-type GaSb/InAs structures.