Showing papers by "Gg G. Siu published in 2004"
TL;DR: In this paper, metal plasma immersion ion implantation using a metal vacuum vapor arc (MEVVA) or cathodic arc source was used to modify the fluorine-based polymer, Teflon.
48 citations
TL;DR: In this article, metal cathodic arc and acetylene dual plasma deposition is used to synthesize molybdenum-containing diamond-like carbon (Mo-DLC) thin films.
Abstract: Metal cathodic arc and acetylene dual plasma deposition is used to synthesize molybdenum-containing diamond-like carbon (Mo-DLC) thin films. The Mo contents in the film layer can be controlled by varying the acetylene gas flow rates and the substrate bias voltages. The Mo-doped film prepared by the above technique exhibits small surface roughness. Fine molybdenum carbide grains are found to be embedded inside the amorphous carbon cross-linked structures. In addition, these films are shown to possess high thermal stability after a series of high temperature annealing. The results show that dual plasma deposition is a useful and effective technique to fabricate metal-incorporated carbon thin films with controlled metal contents.
33 citations
TL;DR: In this paper, the growth mechanism of Cu oxide nanowires in Si-based porous anodic alumina (PAA) template was discussed, and it was shown that the formation of Cu2O is due to the alkalinity of the anodized solution.
16 citations
TL;DR: In this article, a Si-based nano-island array was fabricated on porous anodic alumina by two methods, in which a thick silicon film was first deposited onto the surface with highly ordered bowl array prepared by anodizing an Al foil, followed by the formation of a polycrystalline silicon nano-Island array on the surface close to the bowl array after dissolving aluminum.
15 citations
TL;DR: Germanium oxide thin films on silicon substrate were produced using pulsed laser deposition method under adjusted substrate temperature and oxygen pressure as discussed by the authors, and two PL bands observed in their samples, violet and blue bands, attributed both of them to the neutral oxygen vacancy (NOV) but of different types: Ge Ge and Ge Si, respectively.
12 citations
TL;DR: In this paper, the photoluminescence (PL) of the grown porous anodic alumina (PAA) under same voltage was analyzed with three typical stages according to j- t curve.
12 citations
TL;DR: In this article, anodic oxidation of Al film on silicon substrate in oxalic acid is investigated through the j-t curves and its photoluminescence (PL) growth with three typical stages according to j −t curve, which is agreed with the growth of nanoscale SiO2 islands at the interface between Al film and Si substrate.
11 citations
TL;DR: In this paper, high quality (1 − 0 − 0) ZnO films with smooth surface topography have been synthesized on Si substrate by plasma immersion ion implantation, and the optical phenomenon as well as the transition mechanism which may involve defects induced by the high substrate bias are discussed.
9 citations
TL;DR: This work improves the understanding of the origin of blue emission from silicon/oxygen-related nanostructured materials and proposes a luminescent center in the SiOx layer at the surface of a Si nanocrystallite.
Abstract: Using C60 molecule as a kind of surface-passivated agent to modify the electronic structure of Si nanocrystallites in porous silicon, we disclose that this kind of C60/nanocrystalline Si coupling system can show a strong blue emission at ∼460 nm when stored in air for more than one year After a full characterization of the photoluminescence properties, we propose a luminescent center in the SiOx layer at the surface of a Si nanocrystallite It is a pair consisting of an oxygen vacancy and an interstitial oxygen The interstitial oxygen also forms a peroxy linkage with a neighboring lattice oxygen Radiative recombination of carriers photogenerated from Si nanocrystallite cores in the luminescent centers results in the observed blue photoluminescence Neutron irradiation experiments support our assignment of the blue emission mechanism This work improves the understanding of the origin of blue emission from silicon/oxygen-related nanostructured materials
4 citations
08 Dec 2004
TL;DR: In this paper, a metal cathodic vacuum arc and acetylene dual plasma are synchronized to produce Me-DLC and the results acquired by Rutherford backscattering spectrometry (RBS) show that the film thickness and metal content can be controlled by the process windows.
Abstract: Diamond-like-carbon (DLC) films have an amorphous structure comprising a sophistical carbon matrix and have attracted a great deal of scientific interest. Metal-doped DLC (Me-DLC) can possess superior properties as metal nanoclusters or nanocrystalline metallic carbides can be embedded in the carbon network. Therefore, Me-DLC exhibits good adhesion to the substrate, high hardness, low friction coefficient and high magnitude of conductivity. In this work, a metal cathodic vacuum arc and acetylene dual plasma are synchronized to produce Me-DLC. We systematically fabricate the Me-DLC films by varying the acetylene flow rate and substrate bias voltage. Our results acquired by Rutherford backscattering spectrometry (RBS) show that the film thickness and metal content can be controlled by the process windows. Four point probe measurements illustrate a decrease in the resistivity with increasing metal content whereas x-ray photoelectron spectroscopy (XPS) and x-ray diffraction (XRD) results show the formation of carbide phases in the carbon matrix. To evaluate the thermal stability of the thin film, both undoped DLC and Me-DLC films are annealed at a series of temperature in argon ambient. Raman scattering results reveal that the Me-DLC films can tolerate a high annealing temperature without serious graphitization. It is believed that metals incorporation retards the restructuring of the carbon matrix during the annealing processes.
3 citations
TL;DR: In this article, a LiNbO3(:Fe) or LiTaO3 film is sandwiched between a (012)-oriented α-sapphire wafer and an amorphous Al2O3 or SiO2 film using pulsed laser deposition.
Abstract: A LiNbO3(:Fe) or LiTaO3 film is sandwiched between a (012)-oriented α-sapphire wafer and an amorphous Al2O3 or SiO2 film using pulsed laser deposition. After annealing at 1000 °C in O2, the film becomes a c-oriented single-domain ferroelectric. This sandwich structure shows an enhanced photoluminescence from trace amounts of Cr3+ centers in the host α-sapphire (R-line emission at 691 nm). Spectral analyses suggest that both strong space-charge and photorefractive effects of the LiNbO3(:Fe) or LiTaO3 film cause a change in the crystal field of the host α-sapphire, which increases the transition probability of Cr3+ and thus leads to an enhancement of the R-line intensity. The result has prospective applications in laser and optical integrated devices.