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Gianluca Calestani

Researcher at University of Parma

Publications -  215
Citations -  5134

Gianluca Calestani is an academic researcher from University of Parma. The author has contributed to research in topics: Crystal structure & Magnetization. The author has an hindex of 32, co-authored 213 publications receiving 4680 citations. Previous affiliations of Gianluca Calestani include University of Milan & Centra.

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MAPbI3-xClx Mixed Halide Perovskite for Hybrid Solar Cells: The Role of Chloride as Dopant on the Transport and Structural Properties

TL;DR: In this paper, the structural properties of iodide/chloride mixed-halide perovskites and correlating them with their photovoltaic performances were investigated, and they found that, independent of the components ratio in the precursor solution, Cl incorporation in an iodide-based structure, is possible only at relatively low concentration levels (below 3-4%).
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Size-dependent extinction coefficients of PbS quantum dots.

TL;DR: A characterization via X-ray diffraction and high-resolution transmission electron microscopy and second-derivative analysis of the absorption spectra allowed to determine the size dependence of seven transitions in the absorption spectrum; some of these transitions were identified on the basis of their normalized confinement energy.
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The real structure of ε-Ga2O3 and its relation to κ-phase

TL;DR: In this paper, high-resolution transmission electron microscopy (TEM) and X-ray diffraction (XRD) was carried out on Ga2O3 epilayers grown at low temperature (650 °C) by vapor phase epitaxy in order to investigate the real structure at the nanoscale.
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p-t-Butylcalix[4]arene tetra-acetamide: a new strong receptor for alkali cations [1]

TL;DR: In this paper, a new lipophilic etheramide ligand was obtained in high yield from the reaction of p-t-butylcalix[4]arene with α-chloro-N,N-diethyl acetamide.
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Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

TL;DR: The crystal structure and ferroelectric properties of ε-Ga2O3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique.