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Gregory Stryganyuk

Researcher at University of Mainz

Publications -  86
Citations -  2164

Gregory Stryganyuk is an academic researcher from University of Mainz. The author has contributed to research in topics: Luminescence & Photoluminescence. The author has an hindex of 25, co-authored 86 publications receiving 2006 citations. Previous affiliations of Gregory Stryganyuk include ODESSA & Lviv University.

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Electronic, structural, and magnetic properties of the half-metallic ferromagnetic quaternary Heusler compounds CoFeMnZ (Z = Al, Ga, Si, Ge)

TL;DR: The quaternary intermetallic Heusler compounds CoFeMn$Z$ ($Z=\text{Al}$, Ga, Si, or Ge) with $1:1: 1:1$ stoichiometry were predicted to exhibit half-metallic ferromagnetism by ab initio electronic structure calculations as discussed by the authors.
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Single-crystalline films of Ce-doped YAG and LuAG phosphors: advantages over bulk crystals analogues

TL;DR: In this paper, the luminescent properties of phosphors based on single-crystalline films (SCF) of Y3Al5O12:Ce (YAG: Ce) and Lu3Al 5O12 :Ce(LuAG: ce) garnets have been analyzed in comparison with SCF analogues, and it has been shown that the main peculiarity of luminescence properties of these SCF as compared to SC is determined by the extremely low concentration of YAl3+ and LuAl 3+ antisite defects
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Electronic structure of Pt based topological Heusler compounds with C1b structure and zero band gap

TL;DR: In this paper, the electronic structure of the Heusler compounds PtYSb and PtLaBi was investigated by bulk sensitive hard x-ray photoelectron spectroscopy.
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Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V)

TL;DR: In this paper, a substitutional series of Heusler compounds was synthesized and investigated with respect to their electronic structure and transport properties, and the results showed the possibility to create $n$-type and low $p$ -type thermoelectrics within one Heussler compound.
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A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission

TL;DR: In this paper, the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature was investigated, where the high bulk sensitivity of hard x-ray photoelectron spectroscopy (HAXPES) was used as a nondestructive technique to analyze CoFeB-MgO-CoFeB magnetic tunnel junctions.