S
Shoji Ikeda
Researcher at Tohoku University
Publications - 183
Citations - 14380
Shoji Ikeda is an academic researcher from Tohoku University. The author has contributed to research in topics: Tunnel magnetoresistance & Magnetization. The author has an hindex of 51, co-authored 176 publications receiving 13092 citations. Previous affiliations of Shoji Ikeda include Fujitsu.
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
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Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
Shoji Ikeda,Jun Hayakawa,Yoshito Ashizawa,Y. M. Lee,Katsuya Miura,Katsuya Miura,H. Hasegawa,Masakiyo Tsunoda,F. Matsukura,Hideo Ohno +9 more
TL;DR: In this article, the authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕SiO2 or Co20Fe 60B20 ∕Ta pseudo-spin-valve magnetic tunnel junction junction annealed at 525°C.
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Magnetic Tunnel Junctions for Spintronic Memories and Beyond
Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Yuzo Ohno,Takahiro Hanyu,Hideo Ohno +6 more
TL;DR: In this article, the authors reported that the magnetic tunnel magnetoresistance (TMR) ratio of the Co40Fe40B20 fixed and free layers made by sputtering with an industry-standard exchange bias structure and post deposition annealing at Ta = 400 degC.
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Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures
TL;DR: In this article, the effect of applied electric field EG on thickness dependent magnetic anisotropy of sputtered Co40Fe40B20 sandwiched with MgO and Ta was investigated.
Journal ArticleDOI
Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
Shun Kanai,Michihiko Yamanouchi,Shoji Ikeda,Yoshinobu Nakatani,Fumihiro Matsukura,Hideo Ohno +5 more
TL;DR: In this paper, a sputtered CoFeB/MgO-based magnetic tunnel junction with a perpendicular magnetic easy axis in a static external magnetic field is realized for a ∼180° magnetization reversal, where the bias voltage pulse duration is adjusted to a half period of the precession.