G
Guilherme A. S. Ribeiro
Researcher at Universidade Federal de Minas Gerais
Publications - 14
Citations - 168
Guilherme A. S. Ribeiro is an academic researcher from Universidade Federal de Minas Gerais. The author has contributed to research in topics: Topological insulator & Raman spectroscopy. The author has an hindex of 4, co-authored 11 publications receiving 131 citations. Previous affiliations of Guilherme A. S. Ribeiro include Pierre-and-Marie-Curie University & Coordenadoria de Aperfeiçoamento de Pessoal de Nível Superior.
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Journal ArticleDOI
Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles
Guilherme A. S. Ribeiro,Guilherme A. S. Ribeiro,Lorenzo Paulatto,Raffaello Bianco,Raffaello Bianco,Ion Errea,Ion Errea,Francesco Mauri,Francesco Mauri,Matteo Calandra +9 more
TL;DR: In this article, the authors investigated the anharmonic phonon spectra and the occurrence of a ferroelectric transition in PbTe and SnTe and found that phonon frequencies strongly depend on the approximation used for the exchange-correlation kernel in density-functional theory.
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Surface structure of Bi 2 Se 3 (111) determined by low-energy electron diffraction and surface x-ray diffraction
Diogo Duarte dos Reis,Lucas Barreto,Marco Bianchi,Guilherme A. S. Ribeiro,Edmar A. Soares,Wendell S. Silva,Vágner E. Carvalho,Jonathan Rawle,Moritz Hoesch,Chris Nicklin,Willians Principe Fernandes,Jianli Mi,Bo B. Iversen,Philip Hofmann +13 more
TL;DR: In this paper, the surface structure of the prototypical topological insulator Bi2Se3 was determined by low-energy electron diffraction and surface x-ray diffraction at room temperature.
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Temperature-induced coexistence of a conducting bilayer and the bulk-terminated surface of the topological insulator Bi2Te3.
Paula Mariel Coelho,Guilherme A. S. Ribeiro,Angelo Malachias,V. L. Pimentel,Wendell S. Silva,Diogo Duarte dos Reis,Mario S. C. Mazzoni,Rogério Magalhães-Paniago +7 more
TL;DR: Using scanning tunneling microscopy and X-ray crystal truncation rod scattering, the coexistence of a conducting bilayer and the bare surface of bulk-terminated Bi2Te3 is observed and density functional theory calculations are performed to determine the electronic properties of the possible surface terminations.
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Origin of the complex Raman tensor elements in single-layer triclinic ReSe2
Geovani C. Resende,Guilherme A. S. Ribeiro,Orlando J. Silveira,Jessica S. Lemos,J. C. Brant,Daniel Rhodes,Luis Balicas,Mauricio Terrones,Mario S. C. Mazzoni,Cristiano Fantini,Bruno R. Carvalho,Marcos A. Pimenta +11 more
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Activation of topological insulator phase in kagomé-type bilayers by interlayer coupling: The cases of Ni(CO)4 and Pd(CO)4
TL;DR: In this paper, it was shown that a 2D kagome-type topological insulator can be built as a bilayer of a single-layer material that is not a TI.