Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

/pdf/lasing-in-direct-bandgap-gesn-alloy-grown-on-si-515b98x7i8.pdf

Lasing in direct-bandgap GeSn alloy grown on Si

Silicon Photonics technology is rapidly maturing as a platform for larger-scale photonic circuits. As a result, the associated design methodologies are also evolving from componentoriented design to a more circuit-oriented design flow, that makes abstraction from the very detailed geometry and enables design on a larger scale. In this paper, we review the state of this emerging photonic circuit design flow and its synergies with electronic design automation (EDA). We cover the design flow from schematic capture, circuit simulation, layout and verification. We discuss the similarities and the differences between photonic and electronic design, and the challenges and opportunities that present themselves in the new photonic design landscape, such as variability analysis, photonic-electronic co-simulation and compact model definition. Silicon Photonics Circuit Design: Methods, Tools and

https://www.onlinelibrary.wiley.com/doi/epdf/10.1002/lpor.201700237

Silicon Photonics Circuit Design: Methods, Tools and Challenges

The strong correlation between advancing the performance of Si microelectronics and their demand of low power consumption requires new ways of data communication. Photonic circuits on Si are already highly developed except for an eligible on-chip laser source integrated monolithically. The recent demonstration of an optically pumped waveguide laser made from the Si-congruent GeSn alloy, monolithical laser integration has taken a big step forward on the way to an all-inclusive nanophotonic platform in CMOS. We present group IV microdisk lasers with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry–Perot type lasers. Lasing is observed up to 130 K with optical excitation density threshold of 220 kW/cm2 at 50 K. Additionally the influence of strain relaxation on the band structure of undercut resonators is discussed and allows the proof of laser emission for a just direct Ge0.915Sn0.085 alloy where Γ and L valleys have the same energies....

/pdf/optically-pumped-gesn-microdisk-lasers-on-si-3ip1edabyn.pdf

Optically Pumped GeSn Microdisk Lasers on Si

Si–Ge–Sn alloys: From growth to applications

Silicon does not emit light efficiently, therefore the integration of other light-emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide-coupled on-chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra-dense comb lasers, short (850nm) and long (2.3 mu m) wavelength lasers, wide-band LEDs, monolithic O-band lasers and micro-disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/lpor.201700063

Novel Light Source Integration Approaches for Silicon Photonics

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

/pdf/hybrid-iii-v-on-silicon-lasers-for-photonic-integrated-4cv7aax4dc.pdf

Gunter Roelkens

Papers

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon