G
Günther Hendorfer
Researcher at Johannes Kepler University of Linz
Publications - 53
Citations - 706
Günther Hendorfer is an academic researcher from Johannes Kepler University of Linz. The author has contributed to research in topics: Thermography & Thermal diffusivity. The author has an hindex of 13, co-authored 52 publications receiving 650 citations.
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Journal ArticleDOI
Optically active erbium centers in silicon.
Hanka Przybylinska,Hanka Przybylinska,Wolfgang Jantsch,Yu. Suprun-Belevitch,M. V. Stepikhova,L. Palmetshofer,Günther Hendorfer,A. Kozanecki,A. Kozanecki,R. J. Wilson,B.J. Sealy +10 more
TL;DR: It is shown that the exciton binding energies as well as nonradiative quenching rates differ for different Er centers, and under optimum annealing conditions, the isolated interstitial Er has the highest photoluminescence yield at temperatures above 100 K.
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Active thermography as a quantitative method for non-destructive evaluation of porous carbon fiber reinforced polymers
TL;DR: In this article, active thermography was successfully applied as a quantitative method for the non-destructive evaluation of porosity in carbon fiber reinforced polymers, and it was shown that not only the level of the porosity, but also the shape of the pores strongly influences the active thermogram results, in particular the measured thermal diffusivity.
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Characterization of deep levels in CdTe by photo-EPR and related techniques
W. Jantsch,Günther Hendorfer +1 more
TL;DR: In this article, Huang-Rhys factors were derived for the 3D impurities by fitting a model calculation to the photo-ionization cross-section which is derived from constant photo-EPR.
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On the local structure of optically active Er centers in Si
TL;DR: In this article, the photoluminescence (PL) spectra of erbium implanted floatzone (FZ) and Czochralski grown (CZ) silicon were analyzed and the authors concluded that coimplantation with light elements does not lead to the formation of Er•codopant complexes, but rather to Er forming complexes with implantation induced lattice defects.
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Two-dimensional hole gas and Fermi-edge singularity in Be δ-doped GaAs
D. Richards,Joachim Wagner,Harald Schneider,Günther Hendorfer,M. Maier,Albrecht Fischer,K. H. Ploog +6 more
TL;DR: The subband structure of the quasi-two-dimensional hole gas (2DHG) formed at a single Be δ-doped layer in GaAs has been studied by photoluminescence spectroscopy and a pronounced Fermi-edge singularity (FES) is observed in the low-temperature luminescence spectrum.