M. V. Stepikhova

TL;DR: It is shown that the exciton binding energies as well as nonradiative quenching rates differ for different Er centers, and under optimum annealing conditions, the isolated interstitial Er has the highest photoluminescence yield at temperatures above 100 K.

TL;DR: In this paper, the dielectric function of nanocrystalline silicon (nc-Si) with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry.

TL;DR: In this paper, it was shown that Er is incorporated in another surrounding and proposed Si-Er-O nano-precipitates since the spectra of other candidates, like Er 2 O 3, are clearly different.

TL;DR: In this article, the authors reported direct excitation of optically active Er centers in porous Si and identified two kinds of Er centers: (i) Er diffused into porous nanograins with lower than cubic symmetry and (ii) Er centers incorporated in an amorphous silicalike matrix, which showed much weaker thermal quenching of the Er3+ emission which decreases only by a factor of eight when the temperature was increased from 4.2 K up to 360 K.

TL;DR: In this paper, the authors demonstrate that photoluminescence of Ge nanoislands in silicon photonic crystal slab with hexagonal lattice can be dramatically enhanced due to the involvement in the emission process of the bounds states in the continuum.