G
Guy Feuillet
Researcher at French Alternative Energies and Atomic Energy Commission
Publications - 25
Citations - 725
Guy Feuillet is an academic researcher from French Alternative Energies and Atomic Energy Commission. The author has contributed to research in topics: Molecular beam epitaxy & Reflection high-energy electron diffraction. The author has an hindex of 11, co-authored 25 publications receiving 709 citations. Previous affiliations of Guy Feuillet include National Institute of Advanced Industrial Science and Technology & Alternatives.
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Growth and characterization of cubic GaN
Hajime Okumura,K. Ohta,Guy Feuillet,Krishnan Balakrishnan,Shigefusa F. Chichibu,Hiroshi Hamaguchi,Peter Hacke,Sadafumi Yoshida +7 more
TL;DR: In this paper, high quality cubic GaN epilayers were grown on GaAs and 3C-SiC substrates by molecular beam epitaxy technique using dimethylhydrazine or ammonia/nitrogen plasma as a nitrogen source.
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Strain relaxation in (0001) AlN/GaN heterostructures
A. Bourret,Christoph Adelmann,Bruno Daudin,Jean-Luc Rouvière,Guy Feuillet,Guido Mula,Guido Mula +6 more
TL;DR: In this paper, a model for the formation of flat platelets for dislocation nucleation was proposed, which was interpreted in the framework of a model that emphasizes the important role of the flat platelet nucleation.
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Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy
TL;DR: In this paper, the stability of the reconstruction on the (0001) surface of hexagonal phase GaN as a function of growth parameters was studied. But the authors focused on the stability in the reconstruction of the GaN epitaxial layers.
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Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
Shigefusa F. Chichibu,Shigefusa F. Chichibu,Hajime Okumura,Shuji Nakamura,Guy Feuillet,T. Azuhata,Takayuki Sota,Sadafumi Yoshida +7 more
TL;DR: In this article, the fundamental exciton structures in both cubic (c) and hexagonal (h) polytypes of GaN epitaxial films were compared, and the photoreflectance (PR) spectra of both polytypes exhibited excitonic transitions up to room temperature (RT).
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Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN
TL;DR: In this article, small amounts of residual pressure were found to affect the structure of cubic GaN growing surfaces in molecular beam epitaxy growth, i.e., modification of surface reconstruction structures, stabilization of reconstructed flat surfaces at high substrate temperatures, and preferential growth of the cubic phase.