Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry

Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence

Sol-gel synthesis of ZnO thin films

Structural and optical properties of sputtered ZnO films

Zinc oxide (ZnO) thin films were prepared by a low cost chemical deposition technique using sodium zincate bath. Structural characterizations by X-ray diffraction technique (XRD) and scanning electron microscopy (SEM) indicate the formation of ZnO films, containing 0.05–0.50 μm size crystallites, with preferred c-axis orientation. The electrical conductance of the ZnO films became stable and reproducible in the 300–450 K temperature range after repeated thermal cyclings in air. Palladium sensitised ZnO films were exposed to toxic and combustible gases e.g., hydrogen (H2), liquid petroleum gas (LPG), methane (CH4) and hydrogen sulphide (H2S) at a minimum operating temperature of 150 °C; which was well below the normal operating temperature range of 200–400 °C, typically reported in literature for ceramic gas sensors. The response of the ZnO thin film sensors at 150 °C, was found to be significant, even for parts per million level concentrations of CH4 (50 ppm) and H2S (15 ppm).

Chemically deposited zinc oxide thin film gas sensor

Characterization of high quality c axis oriented ZnO thin films grown by metal organic chemical vapor deposition using zinc acetate as source material

Deposition and structural characterization of ZrO2 and yttria-stabilized ZrO2 films by chemical vapor deposition

Amorphous Al2O3 thin films were grown on Si(100) and glass substrates by low‐pressure metalorganic chemical vapor deposition using aluminum acetylacetonate and water vapor as source materials. Water vapor played an important role in the oxidation process and produced carbon‐free, pure Al2O3 films. The deposition temperature could be lowered to 230 °C. The films were characterized by means of x‐ray diffraction, x‐ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, and ellipsometry.

Fabrication of aluminum oxide thin films by a low‐pressure metalorganic chemical vapor deposition technique

Effect of water vapor on the growth of aluminum oxide films by low pressure chemical vapor deposition

The effect of water vapor on the mechanisms of nucleation and growth of metallo‐organic chemical vapor deposited copper films from copper (II) hexafluoroacetylacetonate [Cu(hfa)2] on a polyimide substrate has been investigated. Minimal copper deposition was observed on the polyimide substrate in the absence of water vapor. When water vapor was introduced into the system, blanket copper deposition was observed on the whole polyimide surface. The initial nucleation and growth of copper film on polyimide is initiated by the reaction between the vapor phase precursor and water vapor not the surface chemistry reaction between the vapor phase precursor and the substrate. Copper film growth on the polyimide substrate can thus be attributed to an initial oxidation of the organic ligand by water vapor followed by reduction of the resulting copper oxide by hydrogen.

H.A. Marzouk

Papers

Characterization of high quality c axis oriented ZnO thin films grown by metal organic chemical vapor deposition using zinc acetate as source material

Deposition and structural characterization of ZrO2 and yttria-stabilized ZrO2 films by chemical vapor deposition

Fabrication of aluminum oxide thin films by a low‐pressure metalorganic chemical vapor deposition technique

Effect of water vapor on the growth of aluminum oxide films by low pressure chemical vapor deposition

Effect of water vapor on the nucleation and growth of chemical vapor deposited copper films on spin‐coated polyimide