http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

/pdf/light-emitting-diodes-ubzde6g9qc.pdf

Light-emitting diodes

DC–DC converters with voltage boost capability are widely used in a large number of power conversion applications, from fraction-of-volt to tens of thousands of volts at power levels from milliwatts to megawatts. The literature has reported on various voltage-boosting techniques, in which fundamental energy storing elements (inductors and capacitors) and/or transformers in conjunction with switch(es) and diode(s) are utilized in the circuit. These techniques include switched capacitor (charge pump), voltage multiplier, switched inductor/voltage lift, magnetic coupling, and multistage/-level, and each has its own merits and demerits depending on application, in terms of cost, complexity, power density, reliability, and efficiency. To meet the growing demand for such applications, new power converter topologies that use the above voltage-boosting techniques, as well as some active and passive components, are continuously being proposed. The permutations and combinations of the various voltage-boosting techniques with additional components in a circuit allow for numerous new topologies and configurations, which are often confusing and difficult to follow. Therefore, to present a clear picture on the general law and framework of the development of next-generation step-up dc–dc converters, this paper aims to comprehensively review and classify various step-up dc–dc converters based on their characteristics and voltage-boosting techniques. In addition, the advantages and disadvantages of these voltage-boosting techniques and associated converters are discussed in detail. Finally, broad applications of dc–dc converters are presented and summarized with comparative study of different voltage-boosting techniques.

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Step-Up DC–DC Converters: A Comprehensive Review of Voltage-Boosting Techniques, Topologies, and Applications

Introduction to Electromagnetic Compatibility

J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Extreme Environment Electronics

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25°C to 225°C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.

Datasheet Driven Silicon Carbide Power MOSFET Model

This paper proposes a packaging method for SiC MOSFETs that provides a feasible solution of implementing press-pack packaging on SiC MOSFETs to extend the application of SiC devices into the high power range. The challenges in realizing press-pack packaging of SiC MOSFETs are addressed, and the solutions are proposed that fit the specific requirements of SiC MOSFET. To achieve pressure contact on SiC MOSFETs, miniature and flexible press pins called “fuzz buttons” are used in a low-profile interposer to realize die top side connection. Since the press-pack does not provide internal insulation between the active device and the heatsink, the heatsink is included in the power loop. To avoid large parasitic loop inductance being introduced by the heatsinks, a microchannel heatsink is developed which has a low thickness while remaining adequate heat dissipation efficiency. The structure and assembly process flow of the press-pack SiC MOSFET are provided. A half-bridge stack prototype with two press-packs and three heatsinks is developed. The thermal and electrical performances of the press-pack and the half-bridge stack are evaluated by simulations and tests to validate the feasibility of the proposed packaging approach.

A Solution to Press-Pack Packaging of SiC MOSFETS

Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Presently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si IGBT- SiC Schottky diode hybrid 55kW inverter by replacing the Si pn diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results to those of a similar all-Si inverter. I. INTRODUCTION There is a growing demand for more efficient, higher power density, and higher temperature operation of the power converters in transportation applications. In spite of the advanced technology, silicon (Si) power devices cannot meet some transportation requirements. Silicon carbide (SiC) has been identified as a material with the potential to replace Si devices in the near term because of its superior material advantages such as wider bandgap, higher thermal conductivity, and higher critical breakdown field strength. SiC devices are capable of operating at high voltages, high frequencies, and at higher junction temperatures. Significant reduction in weight and size of SiC power converters with an increase in the efficiency is projected (1-5). SiC unipolar devices such as Schottky diodes, VJFETs, MOSFETs, etc. have much higher breakdown voltages compared to their Si counterparts which makes them suitable for use in traction drives replacing Si pn diodes and IGBTs (6-14). Presently, SiC Schottky diodes are the most mature and the only commercially marketed SiC devices available. These diodes are commercially available up to 1200V/20A or 600V/20A.

/pdf/a-55-kw-three-phase-inverter-with-si-igbts-and-13txlmjbm1.pdf

H. Alan Mantooth

Papers

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Extreme Environment Electronics

Datasheet Driven Silicon Carbide Power MOSFET Model

A Solution to Press-Pack Packaging of SiC MOSFETS

A 55 kW Three-Phase Inverter with Si IGBTs and