H. R. Chandrasekhar

TL;DR: In this article, the results of Raman scattering and infrared reflectivity measurements on the IV-VI layer-type semiconductors SnS and SnSe are presented and the infrared-active TO, the associated LO-phonon frequencies, and the dielectric constants for all three principal polarizations are determined from a Kramers-Kronig analysis of the reflectivity data.

TL;DR: In this article, the authors synthesize ZnO films on GaAs substrates at different growth conditions by pulse laser deposition and show that the bound exciton peaks located between 3.37 and 3.35 eV are very strong.

TL;DR: In this paper, the photoluminescence spectra of GaAs quantum wells of widths 26 to 150 A\r{} were studied as a function of hydrostatic pressure (0--70 kbar) at 80 and 150 K.

TL;DR: In this article, the authors present photoluminescence studies as a function of temperature from a series of conjugated polymers and a conjugation molecule with distinctly different backbone conformations.

TL;DR: In this paper, the authors present experimental and theoretical findings on the geometry of polycrystalline para hexaphenyl via Raman scattering, and determine the activation energy to promote the molecule from a nonplanar to a planar state to be 0.04 eV, in good agreement with their quantum chemical calculations.