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Hamid Garmestani

Researcher at Georgia Institute of Technology

Publications -  267
Citations -  7474

Hamid Garmestani is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Microstructure & Texture (crystalline). The author has an hindex of 41, co-authored 258 publications receiving 6293 citations. Previous affiliations of Hamid Garmestani include Cornell University & Florida A&M University – Florida State University College of Engineering.

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Effective conductivity in isotropic heterogeneous media using a strong-contrast statistical continuum theory

TL;DR: In this paper, the authors used the strong contrast formulation to predict the effective conductivity of a porous material using two-and three-point probability distribution functions for two-phase media.
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Linking phase field and finite element modeling for process-structure-property relations of a Ni-base superalloy

TL;DR: In this article, a method to link phase-field (process-structure relations) and microstructure-sensitive finite-element (structure property relations) modeling is demonstrated for subsolvus polycrystalline IN100.
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Y-doped CaZrO3/Co3O4 as novel dense diffusion barrier materials for a limiting current oxygen sensor

TL;DR: Results confirmed an excellent limiting current plateau for the fabricated oxygen sensor based on YxCa1-xZr0.7O3-δ/Co3O4 and indicated that Y-doping at the Ca site and/or Zr site might be difficult.
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Effect of the Zener-Hollomon parameter on the dynamic recrystallization kinetics of Mg–Zn–Zr–Yb magnesium alloy

TL;DR: In this article, the progress of dynamic recrystallization (DRX) was modeled by the modified Avrami type equation and the DRX kinetics was expressed as a function of the Zener-Hollomon (Z) parameter.
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An Experimental Insight into the Structural and Electronic Characteristics of Strontium-Doped Titanium Dioxide Nanotube Arrays

TL;DR: In this paper, the possibility of in situ doping during electrochemical anodization of titania nanotube arrays is demonstrated and the mechanism and variations in structural and electronic characteristics of the nanotubes arrays as after doping is systematically explored.