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Han-Don Um

Researcher at Ulsan National Institute of Science and Technology

Publications -  71
Citations -  2015

Han-Don Um is an academic researcher from Ulsan National Institute of Science and Technology. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 22, co-authored 67 publications receiving 1672 citations. Previous affiliations of Han-Don Um include Hanyang University & National Institute of Standards and Technology.

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A strong antireflective solar cell prepared by tapering silicon nanowires.

TL;DR: Compared to the bunched SiNWs, tapered NW solar cells demonstrated superior photovoltaic characteristics, such as a short circuit current of 17.67 mA/cm² and a cell conversion efficiency of ~6.56% under 1.5 AM illumination.
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Lossless hybridization between photovoltaic and thermoelectric devices

TL;DR: The simple method of attaching a TE device to a PV device has greatly improved the conversion efficiency and power output of the PV device (~30% at a 15°C temperature gradient across aTE device).
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A waferscale Si wire solar cell using radial and bulk p-n junctions

TL;DR: Compared to single NW (or MW) arrayed cells, the co-integrated solar cells demonstrate improved photovoltaic characteristics, i.e. a short circuit current of 20 mA cm(-2) and a cell conversion efficiency of ∼ 7.19% at AM 1.5G illumination.
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Cold Isostatic-Pressured Silver Nanowire Electrodes for Flexible Organic Solar Cells via Room-Temperature Processes.

TL;DR: A simple method for creating an intimate contact between AgNWs that uses cold isostatic pressing (CIP) is demonstrated, which enables the fabrication of high-efficiency inverted FOSCs that have a power conversion efficiency of 8.75% on flexible polyethylene terephthalate with no short circuiting occurring as the CIP process minimizes the surface roughness of the AgNW electrode.
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Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes

TL;DR: In this article, a radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n-type znO layer that surrounded a p-type Si nanowires.