J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

This paper overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed

/pdf/overview-of-silicon-carbide-technology-device-converter-2b1ygipox2.pdf

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

This paper presents some of the key advances in power electronics pertaining to shipboard electric power system applications. The focus is on the emerging wide bandgap semiconductor devices, i.e., silicon carbide (SiC) and gallium nitride (GaN) devices, and their potential impact on future shipboard power conversion and drives. Their benefits on power converter efficiency and power density are explained through a case study of a medium-voltage (MV) class motor drive system. SiC and GaN also enable new applications, including solid-state transformers, while posing new design and application challenges such as gate drive, protection, and interaction with loads. In addition to device related topics, this paper also overviews other important advances in power electronics, including topology, control, passive components, thermal management, filters, and packaging. The significance of power electronics building blocks (PEBBs) concept for shipboard power system development is discussed. Recognizing the growing complexity of shipboard power systems, some system-level technologies related to future MV direct current (dc) system architecture are highlighted.

Advances in Power Conversion and Drives for Shipboard Systems

This paper proposes a novel packaging method for insulated-gate bipolar transistor (IGBT) modules based on the concepts of P-cell and N-cell. The novel packaging reduces the stray inductance in the current commutation path in a phase-leg module and hence improves the switching behavior. A P-cell- and N-cell-based module and a conventional module are designed. Using finite-element-analysis-based Ansys Q3D Extractor, electromagnetic simulations are conducted to extract the stray inductance from the two modules. Two prototype phase-leg modules based on the two different designs are fabricated. The parasitics are measured using a precision impedance analyzer. Finally, a double pulse tester based-switching characterization is performed to illustrate the effect of stray inductance reduction in the proposed packaging design. The experimental results show the reduction in overshoot voltage with the proposed layout.

Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module

A 6.5kV, wire-bondless power electronics module with a double-sided cooling is proposed and evaluated. A direct solder attachment is employed to minimize parasitic circuit elements and increase current handling capability as well as to enable a double-sided cooling capability with mechanical robustness. Finite element simulations were performed to investigate the thermal performance, critical breakdown voltage and mechanical stresses of the power electronic module. The active devices in the proposed modules were demonstrated to withstand a 6.5kV breakdown voltage with a reasonable leakage current. The parasitic inductance is also modeled and compared between wire-bonded and wire-bondless power module. The mechanical and electrical performance of the power module agreed well with simulation results.

A 6.5kV wire-bondless, double-sided cooling power electronic module

Increasing load densities are leading to higher fault currents that may exceed the ratings of current circuit breakers. In addition, computer-controlled equipment is more susceptible to power supply disturbances of relatively long durations. So, there is a need for a new piece of equipment which is able to interrupt fault currents before reaching their first maximum peak isolating very fast faulted sections of a distribution system. Solid-state fault current limiters (SSFCL) have been proposed as a solution to accomplish the above, and thus, as a substitute for slow-operating electromechanical circuit breakers. The design of a silicon carbide fault current limiter with high voltage blocking capability and the subsequent testing at a 15-kV test facility are addressed in this paper. The semiconductor devices of this series-connected SSFCL are custom packaged silicon carbide super gate turnoff thyristors and SiC PIN diodes. The 4.16-kV experimental tests illustrate the performance of the proposed SSFCL and demonstrate the potential for deploying them in distribution systems.

A silicon carbide fault current limiter for distribution systems

With the emergence of new power semiconductor devices and packaging technologies, the power density of the power packages or modules is increasing rapidly. Double-sided cooling power packages maximize heat dissipation by enabling heat removal from both the top and bottom sides of the module. This article compares single-sided and double-sided cooling power packaging structures to elucidate advantages and disadvantages of these packaging structures in terms of thermal and thermo-mechanical based on finite element simulations. Simulation results reveal that double-sided cooling power packages greatly improve their thermal performances, but they face challenges due to their high thermo-mechanical stresses. The use of a viscoelastic underfill resin and a coefficient of thermal expansion–matched ceramic chip carrier in the double-sided cooling power packaging structure is shown to reduce thermo-mechanical stresses.

Thermo-mechanical Simulations for Single-Sided and Double-Sided Cooling Power Packages

With the continuing expansion of the electrical distribution system, a fault current limiter is proposed in order to protect electrical devices during fault conditions and improve overall power quality. This paper documents the design and fabrication of power modules based on SiC diode and super gate turn-off thyristor for use in a solid-state fault current limiter (SSFCL) for 4.16 kV distribution systems. The thermal and electrical performances of the power modules were investigated theoretically and experimentally. The current sharing capability of the modules while in a parallel configuration was tested and met the system requirements. The full SSFCL test showed that the power modules can successfully operate at 4.16kV.

A sic SGTO/PIN diode power electronic module for a fault current limiter

Advances in wide band-gap semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) offer many high temperature electronic applications. However, current packaging technologies hinder taking full advantages of the high temperature capabilities offered by these devices. This paper discusses the material and fabrication issues and technologies for high temperature packaging.

Hao Zhang

Papers

A 6.5kV wire-bondless, double-sided cooling power electronic module

A silicon carbide fault current limiter for distribution systems

Thermo-mechanical Simulations for Single-Sided and Double-Sided Cooling Power Packages

A sic SGTO/PIN diode power electronic module for a fault current limiter

High temperature power electronic module packaging