H
Hari P. Nair
Researcher at Cornell University
Publications - 67
Citations - 928
Hari P. Nair is an academic researcher from Cornell University. The author has contributed to research in topics: Thin film & Quantum well. The author has an hindex of 15, co-authored 60 publications receiving 649 citations. Previous affiliations of Hari P. Nair include Indian Institute of Technology Madras & University of Texas at Austin.
Papers
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Journal ArticleDOI
Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios
Hari P. Nair,Yang Liu,Jacob Ruf,Nathaniel J. Schreiber,Shun Li Shang,David J. Baek,Berit H. Goodge,Lena F. Kourkoutis,Zi Kui Liu,Kyle Shen,Darrell G. Schlom +10 more
TL;DR: In this article, a combined phase stability diagram based on the thermodynamics of MBE growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.
Journal ArticleDOI
Image registration of low signal-to-noise cryo-STEM data.
Benjamin H. Savitzky,Ismail El Baggari,Colin B. Clement,Emily Waite,Berit H. Goodge,David J. Baek,John P. Sheckelton,Christopher Pasco,Hari P. Nair,Nathaniel J. Schreiber,Jason Hoffman,Jason Hoffman,Alemayehu S. Admasu,Jaewook Kim,Sang-Wook Cheong,Anand Bhattacharya,Darrell G. Schlom,Tyrel M. McQueen,Robert Hovden,Robert Hovden,Lena F. Kourkoutis +20 more
TL;DR: This work presents an approach which effectively registers and averages image stacks which are challenging due to their low-SNR and propensity for unit cell misalignments, and demonstrates the effectiveness of this approach on experimental, cryogenic STEM datasets.
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Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping
TL;DR: In this article, the p-type contact doping was increased to increase the energetic barrier to minority electron injection into the p region, which is a significant source of dark current at room temperature.
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High-Gain InAs Avalanche Photodiodes
Wenlu Sun,Zhiwen Lu,Xiaoguang Zheng,Joe C. Campbell,Scott J. Maddox,Hari P. Nair,Seth R. Bank +6 more
TL;DR: In this paper, two InAs avalanche photodiode structures with very low background doping in the depletion region have been reported, and the measured gain-bandwidth product is >; 300 GHz.
Journal ArticleDOI
Exceptionally High, Strongly Temperature Dependent, Spin Hall Conductivity of SrRuO3.
Yongxi Ou,Zhe Wang,Celesta S. Chang,Hari P. Nair,Hanjong Paik,Neal Reynolds,Daniel C. Ralph,David A. Muller,Darrell G. Schlom,Robert A. Buhrman +9 more
TL;DR: It is determined that SrRuO3 has a strongly temperature-dependent spin Hall conductivity σ SH, increasing with the electrical conductivity, consistent with expected behavior of the intrinsic effect in the "dirty metal" regime.