An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Damascene Cu electroplating for on-chip metallization, which we conceived and developed in the early 1990s, has been central to IBM's Cu chip interconnection technology. We review here the challenges of filling trenches and vias with Cu without creating a void or seam, and the discovery that electrodeposition can be engineered to give filling performance significantly better than that achievable with conformal step coverage. This attribute of superconformal deposition, which we call superfilling, and its relation to plating additives are discussed, and we present a numerical model that represents the shape-change behavior of this system.

Damascene Copper electroplating for chip interconnections

Damascene copper electroplating for on-chip interconnections, a process that we conceived and developed in the early 1990s, makes it possible to fill submicron trenches and vias with copper without creating a void or a seam and has thus proven superior to other technologies of copper deposition. We discuss here the relationship of additives in the plating bath to superfilling, the phenomenon that results in superconformal coverage, and we present a numerical model which accounts for the experimentally observed profile evolution of the plated metal.

Damascene copper electroplating for chip interconnections

The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance, and yield characteristics. They introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. Challenges for the technology are addressed, including the design of PCM cells for low reset current, the need to control device-to-device variability, and undesirable changes in the phase change material that c...

Phase change memory technology

The design and fabrication of three-dimensional multifunctional architectures from the appropriate nanoscale building blocks, including the strategic use of void space and deliberate disorder as design components, permits a re-examination of devices that produce or store energy as discussed in this critical review. The appropriate electronic, ionic, and electrochemical requirements for such devices may now be assembled into nanoarchitectures on the bench-top through the synthesis of low density, ultraporous nanoarchitectures that meld high surface area for heterogeneous reactions with a continuous, porous network for rapid molecular flux. Such nanoarchitectures amplify the nature of electrified interfaces and challenge the standard ways in which electrochemically active materials are both understood and used for energy storage. An architectural viewpoint provides a powerful metaphor to guide chemists and materials scientists in the design of energy-storing nanoarchitectures that depart from the hegemony of periodicity and order with the promise—and demonstration—of even higher performance (265 references).

Multifunctional 3D nanoarchitectures for energy storage and conversion.

High-performance Cu2ZnSnS4 photovoltaic devices are demonstrated using electrodeposition of metal stacks and annealing of a CuZnSn precursor in a sulfur atmosphere. A champion electroplated Cu2ZnSnS4 solar cell achieves a power conversion efficiency of 7.3%, which is a record efficiency for electrodeposited Cu2ZnSnS4 solar devices. The device performance points to electrodeposition and annealing as a low-cost and viable approach to earth-abundant solar cell fabrication.

A High Efficiency Electrodeposited Cu2ZnSnS4 Solar Cell

Copper plating baths used for forming integrated circuit interconnects typically contain three or four component additive mixtures which facilitate the superfilling of via holes and trench lines during damascene plating. Extensive study over the last two decades has provided researchers with an understanding of the underlying mechanisms. The role of cuprous intermediates in the copper deposition reaction has long been acknowledged, but it is not yet fully understood. In this paper we describe the results of an electrochemical study of the interaction of the organic additives used with copper and copper ions in solution. It is shown that cuprous intermediates near the copper surface affect the overpotential and the kinetics of plating. The additives regulate the presence of cuprous species on the surface; levelers and suppressors inhibit Cu+ formation, whereas accelerating additives enhance Cu+ formation. Acceleration by the bis(sodiumsulfopropyl) disulfide (SPS) additive results from accumulation of cuprous complexes near the surface. Adsorbed cuprous thiolate [Cu(I)(S(CH2)3 SO3H)ad] is formed through interaction of Cu+ ions and SPS rather than Cu2+ and mercaptopropane sulfonic acid (MPS).

https://www.webpages.uidaho.edu/nanomaterials/research/Papers/IBM%20papers/Vol%2049,%20No%201,%202005,%20p.%203%20Vereecken-Chemistry%20of%20additives.pdf

The chemistry of additives in damascene copper plating

High performance Cu2ZnSnSe4 (CZTSe) photovoltaic materials were synthesized by electrodeposition of metal stack precursors followed by selenization. A champion solar cell with 7.0% efficiency is demonstrated. This is the highest efficiency among all of the CZTSe solar cells prepared from electrodeposited metallic precursors reported to-date. Device parameters are discussed from the perspective of material microstructure and composition in order to improve performance. In addition, a high performance electrodeposited CZTS (S only) solar cell was demonstrated and its device characteristics were compared against the CZTSe (Se only) cell. Using secondary ion mass spectrometry for the analysis of the chemical composition of the absorber layer, a higher concentration of oxygen in the electrodeposited absorber is thought to be the root cause of the lower performance of the electrodeposited CZTS or CZTSe solar cells with respect to a solar cell fabricated by evaporation. The grain boundary areas of Sn-rich composition are thought to be responsible for the lower shunt resistance commonly observed in CZTSe devices. We measured the longest minority carrier lifetime of 18 ns among all reported kesterite devices. This work builds a good baseline for obtaining higher efficiency earth-abundant solar cells, while it highlights electrodepositon as a low cost and feasible method for earth-abundant thin film solar cell fabrication. Copyright © 2013 John Wiley & Sons, Ltd.

Hariklia Deligianni

Papers

Damascene Copper electroplating for chip interconnections

Damascene copper electroplating for chip interconnections

A High Efficiency Electrodeposited Cu2ZnSnS4 Solar Cell

The chemistry of additives in damascene copper plating

Electrodeposited Cu2ZnSnSe4 thin film solar cell with 7% power conversion efficiency