This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.

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Metal-Assisted Chemical Etching of Silicon: A Review

There are growing concerns over the environmental, climate, and health impacts caused by using non-renewable fossil fuels. The utilization of green energy, including solar and wind power, is believed to be one of the most promising alternatives to support more sustainable economic growth. In this regard, lithium-ion batteries (LIBs) can play a critically important role. To further increase the energy and power densities of LIBs, silicon anodes have been intensively explored due to their high capacity, low operation potential, environmental friendliness, and high abundance. The main challenges for the practical implementation of silicon anodes, however, are the huge volume variation during lithiation and delithiation processes and the unstable solid-electrolyte interphase (SEI) films. Recently, significant breakthroughs have been achieved utilizing advanced nanotechnologies in terms of increasing cycle life and enhancing charging rate performance due partially to the excellent mechanical properties of nanomaterials, high surface area, and fast lithium and electron transportation. Here, the most recent advance in the applications of 0D (nanoparticles), 1D (nanowires and nanotubes), and 2D (thin film) silicon nanomaterials in LIBs are summarized. The synthetic routes and electrochemical performance of these Si nanomaterials, and the underlying reaction mechanisms are systematically described.

Silicon-based Nanomaterials for Lithium-Ion Batteries - A Review

Dielectric polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. In this Review, we present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based copolymers/blends as potential components in dielectric nanocomposite materials for high energy density capacitor applications. Various parameters like dielectric constant, dielectric loss, breakdown strength, energy density, and flexibility of the polymer nanocomposites have been thoroughly investigated. Fillers with different shapes have been found to cause significant variation in the physical and electrical properties. Generally, one-dimensional and two-dimensional nanofillers with large aspect ratios provide enhanced flexibility versus zero-dimensional fillers. Surface modification of nanomaterials as well as polymers adds flavor to the dielectric properties of the resulting nanocomposites. Nowadays, three-phase nanocomposites with either combination of fillers...

Recent Progress on Ferroelectric Polymer-Based Nanocomposites for High Energy Density Capacitors: Synthesis, Dielectric Properties, and Future Aspects.

The Kirkendall effect is a consequence of the different diffusivities of atoms in a diffusion couple causing a supersaturation of lattice vacancies. This supersaturation may lead to a condensation of extra vacancies in the form of so-called “Kirkendall voids” close to the interface. On the macroscopic and micrometer scale these Kirkendall voids are generally considered as a nuisance because they deteriorate the properties of the interface. In contrast, in the nanoworld the Kirkendall effect has been positively used as a new fabrication route to designed hollow nano-objects. In this Review we summarize and discuss the demonstrated examples of hollow nanoparticles and nanotubes induced by the Kirkendall effect. Merits of this route are compared with other general methods for nanotube fabrication. Theories of the kinetics and thermodynamics are also reviewed and evaluated in terms of their relevance to experiments. Moreover, nanotube fabrication by solid-state reactions and non-Kirkendall type diffusion processes are covered.

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Formation of nanotubes and hollow nanoparticles based on Kirkendall and diffusion processes: a review.

Semiconductor nanowires (NWs) have been studied extensively for over two decades for their novel electronic, photonic, thermal, electrochemical and mechanical properties. This comprehensive review article summarizes major advances in the synthesis, characterization, and application of these materials in the past decade. Developments in the understanding of the fundamental principles of "bottom-up" growth mechanisms are presented, with an emphasis on rational control of the morphology, stoichiometry, and crystal structure of the materials. This is followed by a discussion of the application of nanowires in i) electronic, ii) sensor, iii) photonic, iv) thermoelectric, v) photovoltaic, vi) photoelectrochemical, vii) battery, viii) mechanical, and ix) biological applications. Throughout the discussion, a detailed explanation of the unique properties associated with the one-dimensional nanowire geometry will be presented, and the benefits of these properties for the various applications will be highlighted. The review concludes with a brief perspective on future research directions, and remaining barriers which must be overcome for the successful commercial application of these technologies.

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25th Anniversary Article: Semiconductor Nanowires – Synthesis, Characterization, and Applications

http://www.beck-shop.de/fachbuch/inhaltsverzeichnis/9783540643715_TOC_001.pdf

Positron Annihilation in Semiconductors

Using advanced depth-sensitive hardness measurements, the homogenous nucleation of dislocations has been observed in dislocation-free single crystals This process is related to a sudden displacement jump in the force-displacement curve The mechanical stress for the set-in of this pop-in effect has been estimated with the Hertzian elastic contact theory Experimental results of dislocation loop nucleation show good agreement with the continuum theory of dislocations Electron microscopy provides a direct proof of dislocation nucleation during nanoindentation

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Pop-in effect as homogeneous nucleation of dislocations during nanoindentation

Because of their importance in fundamental research and possible applications in nanotechnology and nanoelectronics, semiconductor nanowires have attracted much interest. In addition to the growth itself, the control of the size and location is an essential problem. Here we show the growth of ordered arrays of vertically aligned silicon nanowires by molecular beam epitaxy using prepatterned arrays of gold droplets on Si(111) substrates. The ordered arrays of gold particles were produced by nanosphere lithography.

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Ordered Arrays of Silicon Nanowires Produced by Nanosphere Lithography and Molecular Beam Epitaxy

Metal-assisted chemical etching is a relatively new top-down approach allowing a highly controlled and precise fabrication of Si and Si/Ge superlattice nanowires. It is a simple method with the ability to tailor diverse nanowire parameters like diameter, length, density, orientation, doping level, doping type, and morphology. In a typical metal-assisted chemical etching procedure, a Si substrate is covered by a lithographic noble metal film and etched in a solution containing HF and an oxidant (typically H2O2). In general, the function of the metal is to catalyze the reduction of H2O2, which delivers electronic holes necessary for the oxidation and subsequent dissolution of the Si oxide by HF. However, the details of the etching process using contiguous metal thin films, especially the mass transport of reactants and byproducts are still not well understood. In this study, the etching mechanism was systematically investigated. Several models of metal-assisted chemical etching using a contiguous metal film...

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Model for the Mass Transport during Metal-Assisted Chemical Etching with Contiguous Metal Films As Catalysts

Zn On anowires and nanobelts are two representatives of one-dimensional semiconductor nanomaterials possessing potential applications as optoelectronic and sensor devices. In this study, we applied a vapour-transport-deposition method to synthesize both types of nanostructures using relatively low temperatures (860 ◦ C) by controlling the source materials. We found that the resulting product under similar growth conditions can be switched between [0001]-axial nanowires and � 11 ¯ 20� -axial nanobelts simply by adding indium to the source. The former appear as ordered vertical arrays of pure ZnO while the latter are belts without spatial ordering. Both represent defect-free single crystals grown via the vapour–liquid–solid mechanism using nanosphere lithography-fabricated catalyst Au templates. Examination of the early growth stage suggests that the dissolution of In into Au influences the nucleation of ZnO at the solid–liquid interface, and subsequently defines the structure and crystallographic orientation of the nanobelts. The optical properties of both nanostructures are studied by photoluminescence and resonant Raman scattering, which indicate consistently that the doped nanobelts have a higher carrier concentration than the nanowires. (Some figures in this article are in colour only in the electronic version)

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Hartmut S. Leipner

Papers

Positron Annihilation in Semiconductors

Pop-in effect as homogeneous nucleation of dislocations during nanoindentation

Ordered Arrays of Silicon Nanowires Produced by Nanosphere Lithography and Molecular Beam Epitaxy

Model for the Mass Transport during Metal-Assisted Chemical Etching with Contiguous Metal Films As Catalysts

Vapour-transport-deposition growth of ZnO nanostructures: switch between c-axial wires and a-axial belts by indium doping