H
Haruhiko Tanaka
Researcher at Hitachi
Publications - 4
Citations - 198
Haruhiko Tanaka is an academic researcher from Hitachi. The author has contributed to research in topics: Semiconductor & Layer (electronics). The author has an hindex of 4, co-authored 4 publications receiving 198 citations.
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Patent
Semiconductor device and semiconductor memory device
Dai Hisamoto,Toru Kaga,Shinichiro Kimura,Masahiro Moniwa,Haruhiko Tanaka,Atsushi Hiraiwa,Eiji Takeda +6 more
TL;DR: In this paper, a semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics, and necessary electrodes such as the gate electrode and necessary insulating layers can be added at the thin semiconductor layer, and can maintain the necessary amount of electric current by securing the height of the semiconductor layers.
Patent
Method for manufacturing a semiconductor device and a semiconductor memory device
Dai Hisamoto,Toru Kaga,Shinichiro Kimura,Masahiro Moniwa,Haruhiko Tanaka,Atsushi Hiraiwa,Eiji Takeda +6 more
TL;DR: In this paper, an improved method for manufacturing an insulated gate field effect transistor is provided, where a silicon oxide film is grown on a silicon substrate, and a first silicon nitride film is deposited thereon.
Patent
Method of manufacturing a semiconductor device having silicon islands
Dai Hisamoto,Toru Kaga,Shinichiro Kimura,Masahiro Moniwa,Haruhiko Tanaka,Atsushi Hiraiwa,Eiji Takeda +6 more
TL;DR: In this paper, a semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics, which can maintain the necessary amount of electric current by securing the height of the semiconductor layer and also reduce its plane size.
Patent
Semiconductor device and semiconductor storage device
Atsushi Hiraiwa,Masaru Hisamoto,Toru Kaga,Shinichiro Kimura,Masahiro Shigeniwa,Eiji Takeda,Haruhiko Tanaka +6 more
TL;DR: In this paper, a gate electrode 30 sandwiches a gate insulating film 91, and surrounding a thin film semiconductor layer, a thin-film part which is not covered with a gate 30 is a source electrode 40 and a drain electrode 50; the thin-filtered portion which is sandwiched by the gate 30 between the electrodes 40, 50 constitutes a channel in the direction parallel with the surface of a substrate 10.