Recent advances in ZnO nanostructures and thin films for biosensor applications: review.

https://www.repository.cam.ac.uk/bitstream/1810/264501/1/Fu_et_al-2017-Progress_in_Material_Science-VoR.pdf

Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications

Recent developments on the preparation and application of ZnO films for acoustic wave-based microfluidics and biosensors are reviewed in this paper. High quality and strongly textured ZnO thin films can be prepared using many technologies, among which RF magnetron sputtering is most commonly used. This paper reviews the deposition of ZnO film and summarizes the factors influencing the microstructure, texture and piezoelectric properties of deposited ZnO films. ZnO acoustic wave devices can be successfully used as biosensors, based on the biomolecule recognition using highly sensitive shear horizontal and Love-wave surface acoustic waves, as well as film bulk acoustic resonator devices. The acoustic wave generated on the ZnO acoustic devices can induce significant acoustic streaming, small scale fluid mixing, pumping, ejection and atomization, depending on the wave mode, amplitude and surface condition. The potential to fabricate an integrated lab-on-a-chip diagnostic system based on these ZnO acoustic wave technologies is also discussed.

/pdf/recent-developments-on-zno-films-for-acoustic-wave-based-bio-35es1x3me2.pdf

Recent developments on ZnO films for acoustic wave based bio-sensing and microfluidic applications: a review

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Piezoelectric materials play a crucial role in a large number of devices and applications modern society would not like to miss. Mobile phones and ultrasonic imaging are just the most prominent ones. Since two decades, miniaturization of mechanical devices in silicon technology is a major research direction in engineering known under name of MEMS, which stands for micro-electro-mechanical systems. Piezoelectricity fits very well into this concept and was expected right from the beginning to play its role in MEMS. The breakthrough was made with RF filters in mobile phones working on the principle of standing thickness waves in AlN films. What counts here is acoustic quality and stability. The force champion among piezoelectric thin film materials, Pb(Zr,Ti)O3 gave more problems in processing, and requires more patience to meet requirements and needs for a mass applications. It seems, however, that the breakthrough is imminent. This article attempts to give an overview of the field, highlighting recent achievements, introduce operation principles, and describe some applications.

Recent Progress in Materials Issues for Piezoelectric MEMS

First results on label-free detection of DNA and protein molecules using a novel integrated sensor technology based on gravimetric detection principles.

In this paper the feasibility of thin film bulk acoustic resonators (FBAR), for applications in bio- and gas-detection, is shown for the first time. Solidly mounted, ZnO FBARs with frequencies around 2 GHz have been fabricated on silicon substrates. The dependence of the FBAR mass sensitivity on the design of the layer stack has been investigated exhibiting an optimized sensitivity of 2.5 Hz cm/sup 2//pg. Using a common protein assay the capability of detecting bio-molecules has successfully been proved. Gas sensing has been demonstrated by coating the FBAR with a humidity absorbing polymer. A strong non-linear dependence of the humidity sensitivity on the thickness of the polymer coating has been found. When the polymer thickness is far less than the acoustic wavelength, a pure mass dependent response occurs, leading to a negative shift in resonance frequency. Moreover, as the polymer thickness becomes significant, acoustic influences affect the response and the shift becomes large and positive. A sensitivity to humidity of up to two orders of magnitude higher than that of comparably coated quartz crystal micro-balances has been observed.

Novel integrated FBAR sensors: a universal technology platform for bio- and gas-detection

In a method of determining the possible formation of crystalline defects in a body of a semiconductor material during the process of fabricating integrated circuits in the body, at least one body is subjected to a full fabrication process to form completed integrated circuits in the body which can be electrically tested to determine whether the operation of the integrated circuit is adversely affected by the formation of crystalline defects. Test structures, each of which is only a portion of the complete integrated circuit, are formed during the formation of the complete circuit but are fabricated using only a group of a limited number of the steps of the fabrication process used to fabricate the complete integrated circuit with various ones of the test structures being subjected to different ones of the steps of the group of steps. The test structures may be formed on the same body as the complete circuit or on additional bodies. The test structures are then analyzed to determine which of the steps may have formed crystalline defects in the body.

Method of defect determination and defect engineering on product wafer of advanced submicron technologies

The adjustment of carbon fiber surface properties represents an important aspect to improve the adhesion behavior and the stress transfer between carbon fibers and polymeric matrices in carbon fiber reinforced polymers. In the presented work the surface of continuous carbon fiber tows composed out of 50,000 single fibers, so called 50 k tows, is modified by an atmospheric plasma jet treatment of combined plasma activation and plasma polymerization, to improve adhesion to an epoxy matrix. Methyltrimethoxysilane is used as precursor gas to deposit a silicon organic layer. The developed experimental setup allows stable plasma treatment of more than 1200 m of 50 k carbon fibers, which were shown to be textile processable, and thus represents a promising route for surface treatment of carbon fibers for composite production. Largely homogeneous plasma deposition along and across the 50 k carbon fiber tow is demonstrated by chemical surface analysis and high resolution microscopy. Single fiber mechanical properties are preserved under the plasma treatment.

Methyltrimethoxysilane plasma polymerization coating of carbon fiber surfaces

Shallow junction field effect transistors are made by a low temperature process comprising ion implanting source/drain regions through a buffer layer in two steps, the first an ion implant at high dosage and low energy and the second an ion implant at low dosage and high energy. Ion implantation through the buffer layer avoids crystallographic damage to the silicon substrate. By grading the sidewall spacers of the gate electrode, more or fewer ions can be implanted through the spacer foot to ensure continuity between the source/drain regions and the channel region under the gate electrode.

Heinz Zeininger

Papers

First results on label-free detection of DNA and protein molecules using a novel integrated sensor technology based on gravimetric detection principles.

Novel integrated FBAR sensors: a universal technology platform for bio- and gas-detection

Method of defect determination and defect engineering on product wafer of advanced submicron technologies

Methyltrimethoxysilane plasma polymerization coating of carbon fiber surfaces

Low junction leakage MOSFETs