scispace - formally typeset
H

Heng Zhan

Researcher at Chongqing University

Publications -  6
Citations -  438

Heng Zhan is an academic researcher from Chongqing University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 4, co-authored 6 publications receiving 356 citations.

Papers
More filters
Journal ArticleDOI

Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals

TL;DR: The average value of the figure of merit ZT, of more than 1.17, is measured from 300 K to 800 K along the crystallographic b-axis of 3 at% Na-doped SnSe, with the maximum ZT reaching a value of 2 at 800 K as mentioned in this paper.
Journal ArticleDOI

Synergistic Strategy to Enhance the Thermoelectric Properties of CoSbS1–xSex Compounds via Solid Solution

TL;DR: The thermoelectric properties of solid solution CoSbS1-xSex with stiff bond and smaller Gruneisen parameters are synthesized and measured and can be extended to other high-efficiency thermoelectedric materials with stiff bonded materials.
Journal ArticleDOI

Enhanced thermoelectric performance of chalcogenide Cu 2 CdSnSe 4 by ex-situ homogeneous nanoinclusions

TL;DR: In this article, a quaternary chalcogenide with ex-situ homogeneous nanoinclusions has been synthesized by ball milling, followed by spark plasma sintering.
Journal ArticleDOI

High-Temperature Thermoelectric Properties of Ge-Substituted p-Type Nd-Filled Skutterudites

TL;DR: In this paper, the influence of Ge substitution on the electrical transport properties of Nd-filled p-type skutterudites was investigated, and the results indicated that the large enhancement of ZT through Ge doping indicates that these compounds may have great potential for application as p type segments of thermoelectric devices.
Journal ArticleDOI

Thermoelectric Properties of Ce/Pb Co-doped Polycrystalline In 4−x Ce x Pb 0.01 Se 3 Compounds

TL;DR: In this paper, the thermoelectric properties for polycrystalline In4−x fixme Ce and Pb co-doping at the In sites were investigated and it was shown that the reduced thermal conductivity along with the boosted power factor give rise to an improvement of the dimensionless figure-of-merit, ZT, of over 65% in In4 −xcffff Ce ≥ 0.