A method and apparatus for assembling microstructures onto a substrate through fluid transport. The microstructures being shaped blocks self-align into recessed regions located on a substrate such that the microstructure becomes integral with the substrate. The improved method includes a step of transferring the shaped blocks into a fluid to create a slurry. Such slurry is then dispensed evenly or circulated over the top surface of a substrate having recessed regions thereon. The microstructure via the shape and fluid tumbles onto the surface of the substrate, self-aligns, and engages into a recessed region.

Method and apparatus for fabricating self-assembling microstructures

Methods and systems for determining a critical dimension and overlay of a specimen

Apparatus for assembling microstructures onto a substrate through fluid transport. The apparatus includes a vessel that contains the substrate, a fluid, and microstructures. The substrate has at least one recessed region thereon. The microstructures being shaped blocks self-align into the recessed regions located on the substrate such that the microstructure becomes integral with the substrate. The apparatus also includes a pump that circulates the microstructures within the vessel at a rate where at least one of the microstructures is disposed into the recessed region.

Apparatus for fabricating self-assembling microstructures

The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.

Method and apparatus for monitoring plasma processing operations

Methods and systems for determining a critical dimension and a thin film characteristic of a specimen

An integrated scanning force microprobe and optical microscopy metrology system is disclosed, that measures the depth and width of a trench in a sample. The probe remains fixed while the sample is moved relative to the probe. The system detects the proximity of the probe to a sample and to the side walls of the trench, providing output signals indicating the vertical and transverse relationship of the probe to the sample. The system adjusts the relative position of the sample vertically and transversely as a function of the output signals. Variety of probes can be used with this system to detect the depth and width of the trench. The probe should have at least one protuberance extending down to sense the bottom of the trench. The tip of the probe can have Lateral protuberances that can extend in opposite directions (across the width of the trench) from the probe to detect the side walls of the trench. Forces on the protuberances are measured to determine the depth and the location of the side walls of the trench.

Combined scanning force microscope and optical metrology tool

A method for etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred embodiment, as well as a first alternative embodiment, a computer simulation is performed using an algorithm describing the concentration of the monitored etch species within the etching chamber as a function of time. The simulation produces a time period for continuing the etching process past a detected time while monitoring the intensity of emission of the etch species. In a second alternative embodiment, this latter time period is calculated using mathematical distributions describing the parameters of the etching process. In all three embodiments, the actual time that end point of an etching process is reached is closely approximated. In this manner, all wafers in a batch of wafers being etched reach end point while at the same time, the amount of over etching is greatly minimized.

Optical emission spectroscopy end point detection in plasma etching

An integrated tip strain sensor is combination with a single axis atomic force microscope (AFM) for determining the profile of a surface in three dimensions. A cantilever beam carries an integrated tip stem on which is deposited a piezoelectric film strain sensor. A high-resolution direct electron beam (e-beam) deposition process is used to grow a sharp tip onto the silicon (Si) cantilever structure. The direct e-beam deposition process permits the controllable fabrication of high-aspect ratio, nanometer-scale tip structures. A piezoelectric jacket with four superimposed elements is deposited on the tip stem. The piezoelectric sensors function in a plane perpendicular to that of a probe in the AFM; that is, any tip contact with the linewidth surface will cause tip deflection with a corresponding proportional electrical signal output. This tip strain sensor, coupled to a standard single axis AFM tip, allows for three-dimensional metrology with a much simpler approach while avoiding catastrophic tip "crashes". Two-dimensional edge detection of the sidewalls is used to calculate the absolute value or the linewidth of overlay, independent of the AFM principle. The technique works on any linewidth surface material, whether conductive, non-conductive or semiconductive.

Integrated tip strain sensor for use in combination with a single axis atomic force microscope

A chip registration mechanism may form a part of a carrier for retaining in position a plurality of integrated circuit chips in row and column fashion having identification codes on one surface thereof, such that the chip codes may be read and cooperate with a tray having multiple cells, with each cell receiving an individual integrated circuit chip, or function to position a single chip relative to a reference surface for processing. A chip registration base member includes a pedestal projecting upwardly from a base member within a cavity having transverse dimensions oversized relative to the chip and defining at least one lateral reference surface. A lid extends across the top of the member partially defines the cavity above the chip with the chip resting on the top of the pedestal. Inclined nozzles carried by the pedestal function to jet air from the pedestal top surface against the bottom of the chip to create an air film to support the chip and to impart a force laterally to move the edge of the chip against the cavity reference surface. A relief channel about the base of the pedestal open to the atmosphere prevents flutter of the chip and insures accurate registration contact of the edge of the chip against the cavity reference surface. The same nozzle carried by the pedestal function to vacuum the bottom of the chip against the pedestal top surface to clamp the chip in this orientation.

A chip registration mechanism

An electron beam nanometer-level metrology tool includes an ambient temperature electron source and a movable stage for mounting a workpiece. The stage is adapted to position the workpiece's surface in a beam interrogation region. Electrostatic focus lenses convert electrons emitted by the electron source into a beam with a focal point that is positioned in the beam interrogation region. The lenses cause the electron beam to traverse a path that is generally orthogonal to the workpiece surface. Along the beam path are positioned upper and lower electrostatic deflection plates which are connected to an adjustable voltage source that applies ganged, opposite-sense d/c potentials thereto. Those potentials enable a scanning of the beam across the beam interrogation region while the beam remains substantially orthogonal to the workpiece surface, thereby enabling more accurate measurements of surface features. Within the metrology tool, all beam control surfaces are electrostatic so as to minimize power dissipation and temperature differentials.

Henri Antoine Khoury

Papers

Combined scanning force microscope and optical metrology tool

Optical emission spectroscopy end point detection in plasma etching

Integrated tip strain sensor for use in combination with a single axis atomic force microscope

A chip registration mechanism

Electron beam nano-metrology system