Showing papers by "Herman Maes published in 1986"

Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique

Abstract: Hot carrier degradation in n-channel MOSFET transistors has been evaluated using the charge pumping technique in addition to the conventional I_{ds}-V_{gs} measurements. It is shown that the generation of large amounts of interface states is the primary result of moderate hot carrier stress. The simultaneous injection and recombination of injected electrons and holes is suggested to be responsible for this formation of interface states. The net charge in the oxide and interface states after any hot carrier stress is shown to be positive.

Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

Abstract: A modified floating-gate technique for measuring small gate currents in MOSFET's with very high resolution (0.01 fA) is described. Using this technique, gate oxide currents due to hot-carrier injection are measured in n-channel MOSFET's. The conventional negative channel hot-electron gate oxide current is observed near V_{g} = V_{d} and a small positive gate current occurs at low V g . We argue that the dependencies of this small positive current on V g and gate length, together with results from a separate floating-source experiment, are consistent only with hot-hole injection.