Hiroshi Uehara

TL;DR: In this article, the first oxide film has a good interface condition with the semiconductor film, and a characteristics of an insulated gate field effect transistor can be improved if the oxide film and the second oxide film are used as a gate insulating film.

TL;DR: In this paper, a technique for manufacturing a dense crystalline semiconductor film without a cavity between crystal grains is presented, in which a plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrodes and the second electrode of the plasma cVD apparatus was set to 1 mm to 20 mm.

TL;DR: A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma cVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide films formed and to improve the reliability of the film as mentioned in this paper.

TL;DR: A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma cVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide films formed and to improve the reliability of the film.

TL;DR: In this paper, a highly reliable gate insulation film of silicon oxide by positive column system plasma CVD using hydrocarbon containing organic silane having ethoxy group, oxygen, and chlorine as a material is presented.