Showing papers by "Hiroshi Yamaguchi published in 1988"
TL;DR: In this paper, the surface migration is effectively enhanced by evaporating Ga or Al atoms onto a clean GaAs surface under an As-free or low As pressure atmosphere, which is utilized by alternately supplying Ga and/or Al and AS4 to the substrate surface for growing atomically-flat GaAs-AlGaAs heterointerfaces, and also for growing high quality GaAs and AlGaAs layers at very low substrate temperatures.
Abstract: Surface migration is effectively enhanced by evaporating Ga or Al atoms onto a clean GaAs surface under an As-free or low As pressure atmosphere. This characteristic was utilized by alternately supplying Ga and/or Al and AS4 to the substrate surface for growing atomically-flat GaAs-AlGaAs heterointerfaces, and also for growing high-quality GaAs and AlGaAs layers at very low substrate temperatures. The migration characteristics of surface adatoms have been investigated through reflection high-energy electron diffraction measurements. It was found that different growth mechanisms are operative in this method at both high and low temperatures. Both these mechanisms are expected to yield flat heterojunction interfaces. By applying this method, GaAs layers and GaAs-AlGaAs single quantum-well structures with excellent photoluminescence were grown at substrate temperatures of 200 and 300degC, respectively.
311 citations
TL;DR: The structure of capuramycin has been determined to be an uracil nucleoside with a caprolactam substituent as shown in Fig. 5 by NMR spectral analysis, chemical degradation and X-ray analysis.
40 citations
TL;DR: In this article, atomically flat GaAs-AlGaAs heterointerfaces were grown at a lower than usual substrate temperature by alternately supplying Ga and/or Al and As to the substrate surface.
16 citations