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Hock Guan Ong

Researcher at Nanyang Technological University

Publications -  18
Citations -  814

Hock Guan Ong is an academic researcher from Nanyang Technological University. The author has contributed to research in topics: Carbon nanotube & Electrostatic force microscope. The author has an hindex of 9, co-authored 17 publications receiving 716 citations.

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Highly electrically conductive layered carbon derived from polydopamine and its functions in SnO2-based lithium ion battery anodes

TL;DR: Thin carbonized polydopamine (C-PDA) coatings are found to have similar structures and electrical conductivities to those of multilayered graphene doped with heteroatoms.
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All-carbon electronic devices fabricated by directly grown single-walled carbon nanotubes on reduced graphene oxide electrodes

TL;DR: The second strategy possesses some advantages, such as no CNT purifi cation and no photolithography required, which could be a better choice to produce clean and high-performance CNT-based devices, since the pristine structures and intrinsic properties of the grown CNTs are preserved.
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Oxygen Vacancy Induced Room-Temperature Metal–Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics

TL;DR: In this paper, the authors demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal-insulator transition in epitaxial NdNiO3 films.
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Oxygen vacancy induced room temperature metal-insulator transition in nickelates films and its potential application in photovoltaics

TL;DR: Reversible control of oxygen content by postannealing at temperature lower than 300 °C is demonstrated and the reversible metal-insulator transition in epitaxial NdNiO₃ films is realized and opens up new possibilities for strongly correlated perovskite nickelates.
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Self-Assembled Shape- and Orientation-Controlled Synthesis of Nanoscale Cu3Si Triangles, Squares, and Wires

TL;DR: In this work, nanoscale Cu3Si triangles, squares, and wires have been grown on Si(111), (100), and (110) substrates, respectively, through a template-free Au-nanoparticle-assisted vapor transport method, using Au nanoparticles to absorb Cu vapor and facilitate the rate-limited diffusion of Si.