H
Hsiao-Wen Zan
Researcher at National Chiao Tung University
Publications - 240
Citations - 3597
Hsiao-Wen Zan is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Thin-film transistor & Transistor. The author has an hindex of 30, co-authored 226 publications receiving 3092 citations. Previous affiliations of Hsiao-Wen Zan include AU Optronics & United Microelectronics Corporation.
Papers
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Journal ArticleDOI
Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors
Chen Wei-Tsung,Shih-Yi Lo,Shih-Chin Kao,Hsiao-Wen Zan,Chuang-Chuang Tsai,Jian-Hong Lin,Chun-Hsiang Fang,Chung-Chun Lee +7 more
TL;DR: In this article, the authors discuss the reason for the instability of amorphous indium-gallium-zincoxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses.
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One-Minute Fish Freshness Evaluation by Testing the Volatile Amine Gas with an Ultrasensitive Porous-Electrode-Capped Organic Gas Sensor System
Liang Yu Chang,Ming Yen Chuang,Hsiao-Wen Zan,Hsin-Fei Meng,Chia Jung Lu,Ping Hung Yeh,Jian Nan Chen +6 more
TL;DR: A fast method to determine the fish freshness by using a sensing system containing an ultrasensitive amine gas sensor to detect the volatileAmine gas from the raw fish meat is demonstrated.
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Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer
TL;DR: This high mobility in a-IGZO TFTs implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.
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Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement
Hsiao-Wen Zan,Chen Wei-Tsung,Chung-Cheng Yeh,Hsiu-Wen Hsueh,Chuang-Chuang Tsai,Hsin-Fei Meng +5 more
TL;DR: In this article, a floating dual gate (FDG) indium-gallium-zincoxide (IGZO) thin film transistor with a floating metal back gate that is directly contact with IGZO without a dielectric layer was proposed.
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Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
Hsiao-Wen Zan,Chen Wei-Tsung,Hsiu-Wen Hsueh,Shih-Chin Kao,Ming-Che Ku,Chuang-Chuang Tsai,Hsin-Fei Meng +6 more
TL;DR: In this paper, a real-time visible-light phototransistor comprised of a wideband-gap amorphous indium-gallium-zincoxide (a-IGZO) thin-film transistor (TFT) and a narrow-bandgap polymeric capping layer was demonstrated.