Sb2S3 Solar Cells

Revealing travel patterns and city structure with taxi trip data

Today’s thin film photovoltaic technologies comprising CuInS2 (CIS), CuInGaSe2 (CIGS) and CdTe rely on elements that are costly and rare in the earth’s crust (e.g. In, Ga, Te) and are toxic (e.g. Cd). Hence, in future cost reduction and increased production, using abundantly available non-toxic elements, seem to be the main issues. Cu2ZnSnS4 (CZTS), having the kesterite structure, is one of the most promising absorber layer candidates for low cost thin film solar cells, because of its suitable direct band gap between 1·4 and 1·5 eV and large absorption coefficient, over 104 cm−1. Also it is composed of earth abundant and non-toxic elements, promising price reductions in future. Recently, research in this area has gained momentum due to the desirability of producing Ga, In and Cd free absorber layers and the potential to obtain new insights. Hence, a review of recent literature is urgently warranted. The CZTS progress and present status of CZTS thin film solar cells has been reviewed, with the hope...

CZTS based thin film solar cells: a status review

Synthesis of surface molecular imprinted TiO2/graphene photocatalyst and its highly efficient photocatalytic degradation of target pollutant under visible light irradiation

The order-disorder transition in kesterite Cu2ZnSnSe4 (CZTSe), an interesting material for solar cell, has been investigated by spectrophotometry, photoluminescence (PL), and Raman spectroscopy. Like Cu2ZnSnS4, CZTSe is prone to disorder by Cu-Zn exchanges depending on temperature. Absorption measurements have been used to monitor the changes in band gap energy (Eg) of solar cell grade thin films as a function of the annealing temperature. We show that ordering can increase Eg by 110 meV as compared to fully disordered material. Kinetics simulations show that Eg can be used as an order parameter and the critical temperature for the CZTSe order-disorder transition is 200 ± 20 °C. On the one hand, ordering was found to increase the correlation length of the crystal. But on the other hand, except the change in Eg, ordering did not influence the PL signal of the CZTSe.

The band gap of Cu2ZnSnSe4: Effect of order-disorder

Structure, composition and optical properties of Cu2ZnSnS4 thin films deposited by Pulsed Laser Deposition method

Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method

Structural, magnetic and optical properties of Ni-doped TiO2 thin films deposited on silicon(1 0 0) substrates by sol–gel process

Transition metal (TM)-doped TiO2 films (TM = Co, Ni, and Fe) were deposited on Si(100) substrates by a sol–gel method. With the same dopant content, Co dopants catalyze the anatase-to-rutile transformation (ART) more obviously than Ni and Fe doping. This is attributed to the different strain energy induced by the different dopants. The optical properties of TM-doped TiO2 films were studied with spectroscopic ellipsometry data. With increasing dopant content, the optical band gap (EOBG) shifts to lower energy. With the same dopant content, the EOBG of Co-doped TiO2 film is the smallest and that of Fe-doped TiO2 film is the largest. The results are related to electric disorder due to the ART. Ferromagnetic behaviors were clearly observed for TM-doped TiO2 films except the undoped TiO2 film which is weakly magnetic. Additionally, it is found that the magnetizations of the TM-doped TiO2 films decrease with increasing dopant content.

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Influence of transition metal doping on the structural, optical, and magnetic properties of TiO2 films deposited on Si substrates by a sol-gel process.

Hui Kong

Papers

Structure, composition and optical properties of Cu2ZnSnS4 thin films deposited by Pulsed Laser Deposition method

Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method

Structural, magnetic and optical properties of Ni-doped TiO2 thin films deposited on silicon(1 0 0) substrates by sol–gel process

Influence of transition metal doping on the structural, optical, and magnetic properties of TiO2 films deposited on Si substrates by a sol-gel process.

Effects of Co doping on structure and optical properties of TiO2 thin films prepared by sol–gel method