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Huijun Ren

Researcher at Shaanxi University of Science and Technology

Publications -  149
Citations -  2781

Huijun Ren is an academic researcher from Shaanxi University of Science and Technology. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 24, co-authored 129 publications receiving 1940 citations.

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Enhanced photoelectrochemical performance of Zn2SnO4N by interstitial N induced the build-in polarization electric field

TL;DR: In this paper, high-active Zn2SnO4N photocatalysts were successfully prepared by the one-step microwave-assisted solvothermal method, and the as-prepared photocatalyst exhibited improved photoelectrochemical properties.
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N-doped δ-MnO2 synthesized by the hydrothermal method and its electrochemical performance as anode materials

TL;DR: In this paper, N-doped δ-MnO2 anode materials have been synthesized using a hydrothermal method with urea as the nitrogen source and X-ray photoelectron spectrometer (XPS) results demonstrated that N3− ions enter the interstitial positions of the lattice as well as replacing oxygen ions in MnO2, with the formation of oxygen vacancies.
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Studies on structural, electrical and magnetic properties of Dy-doped BiFeO3 thin films

TL;DR: In this paper, the microstructure, electric property and magnetic property of Bi1−xDyxFeO3 thin films were studied. And the conduction mechanism of the Bi0.90Dy0.10FeO 3 thin film was analyzed.
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Tunable structural transition and multiferroic properties of the composite thin films through the structural transition of magnetic layer

TL;DR: In this article, the structural distortion is observed in the BEFMCO with the appearance of trigonal-R-3m:H in the CM x FO, and the structural transformation of the CM X FO influences the structure and multiferroic properties of the composite films.
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Influence of Mn dopants on the structure and multiferroic properties of a Bi0.90Ho0.10FeO3 thin film

TL;DR: In this paper, the influence of the Mn dopants on the structure and multiferroic properties of the Bi0.90Ho0.10FeO3 thin film is systematically investigated.