H
Huijun Ren
Researcher at Shaanxi University of Science and Technology
Publications - 149
Citations - 2781
Huijun Ren is an academic researcher from Shaanxi University of Science and Technology. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 24, co-authored 129 publications receiving 1940 citations.
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Preparation method for fusiform rod-shaped hexagonal phase BiPO4 powder
TL;DR: In this paper, a preparation method for fusiform rod-shaped hexagonal phase BiPO4 powder is presented, which comprises the steps that the raw materials are added into water and stirred evenly, the pH value is regulated to be in faintly acid, and a precursor solution is formed.
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Mechanism for enhanced ferroelectricity in multi-doped BiFeO 3 thin films
TL;DR: In this paper, a mechanism for the enhanced intrinsic ferroelectricity in multi-doped BFO, using related aspects including the electrostatic potential energy, the Fermi level, and the Schottky interface barrier, is studied.
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Heterostructured CNT-RuSx Nanomaterials for Efficient Electrochemical Hydrogen Evolution Reaction
Chang-Xiang Cheng,W. Ao,Huijun Ren,Zhengyuan Shen,Zhishuai Fan,Tingting Xu,Wei Liu,Qi Zhang,Peiqun Yin,Lei Dai +9 more
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Local surface plasmon resonance promotion of photogenerated electrons to hot electrons for enhancing photothermal CO2 hydrogenation over Ni(OH)2/Ti3C2 catalysts
Shuaijun Feng,Guoqiang Tan,Bixin Zhang,Yu Bi,Qianru Yang,Tian Liu,Ying-Chieh Liu,Zeqiong Wang,Min Wang,Aolin Xia,Huijun Ren,Long Lv,Wenlong Liu,Yun Liu,Yong Wang,Xin-Jie Zhu,L.J. Yuan,Ming Wang +17 more
TL;DR: In this article , Ni(OH)2/Ti3C2 (NiTC) photothermal catalysts were prepared using an acid-base etching-hydrothermal method.
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The enhanced multiferroic properties of BiFeO3 composite film by doping ions in the magnetic layer
TL;DR: In this paper, the structure and performance changes of BGSFMC/CNxFO composite film were studied and the results showed that after the Ni2+-doped CNxFO magnetic bottom layer is combined with the upper BGS-FMC, stress is generated in the film interface, which makes the phase structure change from a single R3c:H phase to the coexistence of R3m:R phases.