H
Huijun Ren
Researcher at Shaanxi University of Science and Technology
Publications - 149
Citations - 2781
Huijun Ren is an academic researcher from Shaanxi University of Science and Technology. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 24, co-authored 129 publications receiving 1940 citations.
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BiVO4 film with polyporous netted structure and preparation method thereof
TL;DR: In this article, the authors provided a BiVO4 film with polyporous net structure and a preparation method thereof, which includes dissolving NH4VO3 and Bi(NO3)3.5H2O into water successively, adjusting the pH value with dilute nitric acid, using boric acid as a promoter to prepare a precursor solution, forming a hydroxyl monomolecular layer from a substrate under the ultraviolet irradiation, and suspending the hyroxyl surface of the substrate on the surface of precursor solution to adsorb [(BiVO3)
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Structure, conduction mechanisms and multiferroic properties of (Sm, Cr) co-doped Bi 0.89 Sm 0.11 Fe 0.97 Cr 0.03 O 3 –NiFe 2 O 4 composition thin films
TL;DR: In this paper, a BSFC-NiFe2O4 (NFO) composition thin film was successfully prepared on FTO/glass (SnO2:F) substrates via a sol-gel method.
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The up-conversion effect induced NIR-photocatalytic performance of Bi2−XErXWO6 photocatalysts
TL;DR: In this article, the up-conversion effect of the Er3+ 4f electrons was investigated and the degradation rates of the Bi2−XErXWO6 photocatalyst reached 96% within 270min and 95% within 30min under simulated sunlight and NIR light.
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Diode-like rectification characteristics of BiFeO3-based /Zn1-xNixFe2O4 bilayered films for application of ferroelectric field effect transistors
Guoqiang Tan,Xixi Ren,Yun Liu,Guo Meiyou,Long Lv,Jincheng Li,Xue Mintao,Huijun Ren,Ao Xia,Wenlong Liu +9 more
TL;DR: In this article, the p-n heterojunction is formed between the BHSFMZO and ZNxFO layers of the bilayered Bi0.89Ho0.08Sr0.03Fe0.95Mn 0.03Zn0.02O3/Zn1-xNixFe2O4 bilayer, which may have potential applications in self-rectified resistive random access memory due to their excellent resistance switching behaviors.
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A kind of Bi1−x Er x FeO3 films with potential excellent multiferroic performances
TL;DR: In this paper, a two-phase coexistence of rhombohedral-R3c:H (BiFeO3) to two phase R3m:R (BExFO) was investigated and the results indicated that the abundant Fe2+ is observed in BExFO, which induces larger leakage current.