Hunyoung Bark

TL;DR: By plasma-enhanced chemical vapor deposition, a molybdenum disulfide (MoS2) thin film is synthesized directly on a wafer-scale plastic substrate at below 300 °C, revealing its potential for flexible sensing devices.

TL;DR: A method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molyBdenum metal source is described.

TL;DR: In this article, a field effect transistor (FET) with two-dimensional (2D) few-layer MoS2 as a sensing channel material was investigated for label-free electrical detection of the hybridization of deoxyribonucleic acid (DNA) molecules.

TL;DR: Structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor, are reported, showing that preferentially cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations.

TL;DR: The CVD method is applied to a reaction of MoO3 powder and H2S gas to grow high-quality polycrystalline monolayer MoS2 sheets with unprecedented uniformity over an area of several centimeters, paves the way for the development of practical devices with MoS1 monolayers and advances fundamental research.