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Il Kwon Oh
Researcher at Yonsei University
Publications - 64
Citations - 1503
Il Kwon Oh is an academic researcher from Yonsei University. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 17, co-authored 64 publications receiving 1068 citations. Previous affiliations of Il Kwon Oh include Stanford University & Ajou University.
Papers
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Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor
Youngbin Lee,Jinhwan Lee,Hunyoung Bark,Il Kwon Oh,Gyeong Hee Ryu,Zonghoon Lee,Hyungjun Kim,Jeong Ho Cho,Jong Hyun Ahn,Changgu Lee +9 more
TL;DR: A method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molyBdenum metal source is described.
Journal ArticleDOI
Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
Il Kwon Oh,Kangsik Kim,Zonghoon Lee,Kyung Yong Ko,Chang Wan Lee,Su Jeong Lee,Jae Min Myung,Clement Lansalot-Matras,Wontae Noh,Christian Dussarrat,Hyungjun Kim,Han-Bo-Ram Lee +11 more
TL;DR: In this paper, thermal and plasma-enhanced ALD (PE-ALD) Er2O3 and Dy 2O3 were developed using the newly synthesized Er and Dy precursors bis-methylcyclopentadienyl-diisopropyl-acetamidinate-erbium and bis-isoprocessionyl-dysprosium, with H2O and O2 plasma counter oxidants.
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Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors.
Atiye Pezeshki,Seyed Hossein Hosseini Shokouh,Pyo Jin Jeon,Iman Shackery,Jin Sung Kim,Il Kwon Oh,Seong Chan Jun,Hyungjun Kim,Seongil Im +8 more
TL;DR: To avoid ambipolar behavior and produce α-MoTe2 FETs with clean p-channel characteristics, the high-workfunction metal platinum is employed for the source and drain contacts.
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Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication
Hyungjun Kim,Il Kwon Oh +1 more
TL;DR: In this paper, the basic characteristics and film properties of PE-ALD processes are reviewed, focusing on the application of the process in key components of nanoscale device fabrication, such as gate oxides, Cu interconnects, and contacts.
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Area-selective Atomic Layer Deposition using Si Precursors as Inhibitors
Rizwan Khan,Bonggeun Shong,Byeong Guk Ko,Jae Kwang Lee,Hyunsoo Lee,Jeong Young Park,Il Kwon Oh,Shimeles Shumi Raya,Hyun Min Hong,Kwun-Bum Chung,Erik J. Luber,Yoon Seok Kim,Chul-Ho Lee,Woo-Hee Kim,Han-Bo-Ram Lee +14 more
TL;DR: Short-chain aminosilanes, namely, bis(N,N-dimethylamino)dimethylsilane (DMADMS), have been used as Si precursors for atomic layer deposition (ALD).