H
Hyun-Seok Cha
Researcher at Chung-Ang University
Publications - 9
Citations - 63
Hyun-Seok Cha is an academic researcher from Chung-Ang University. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 3, co-authored 9 publications receiving 17 citations.
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Journal ArticleDOI
Effects of proton beam irradiation on the physical and chemical properties of IGTO thin films with different thicknesses for thin-film transistor applications
TL;DR: In this paper, the effects of film thickness (tch) on the radiation damage of indium-gallium-tin oxide (IGTO) thin films and radiation tolerance of high-mobility IGTO thin-film transistors (TFTs) were evaluated using a 5-MeV proton beam at a fixed dose of 1013 cm−2.
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Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness
TL;DR: In this article, the effects of aluminum capping layer thickness on the electrical performance and stability of highmobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs) were examined.
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Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors
TL;DR: In this article, the effects of active layer thickness (tS) on the electrical characteristics and stability of highmobility indium-gallium-tin oxide (IGTO) thin-film transistors were investigated.
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Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors
TL;DR: The experimental results demonstrate that incorporating the floating Ni capping layer on the channel layer is an effective method for increasing the field-effect mobility in p-channel SnO TFTs.
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Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations.
TL;DR: This work demonstrated a vertically stacked three-dimensional complementary inverter composed of a p-channel tin monoxide TFT and an n-channel indium-gallium-zinc oxide (IGZO) TFT that exhibited excellent visible-light photoresponse and indicates that the oxide TFT-based vertically stacked complementary inverters can be used as a sensitive photo-sensor operating in the visible spectral range with the voltage read-out scheme.