http://ieeexplore.ieee.org/iel5/5/31324/01456901.pdf

Microelectronic circuits

Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and high-performing thin film transistor (TFT) devices in the context of fundamental understanding is presented. In particular, an in depth overview is first provided on current understanding of the electronic structures, defect and doping chemistry, optical and transport properties of oxide semiconductors, which provide essential guiding principles for new material design and device optimization. With these principles, recent advances in design of p-type oxide semiconductors, new approaches for achieving cost-effective transparent (flexible) electrodes, and the creation of high mobility 2D electron gas (2DEG) at oxide surfaces and interfaces with a wealth of fascinating physical properties of great potential for novel device design are then reviewed. Finally, recent progress and perspective of oxide TFT based on new oxide semiconductors, 2DEG, and low-temperature solution processed oxide semiconductor for flexible electronics will be reviewed.

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

2D and nanostructured metal sulfide materials are promising in the advancement of several gas sensing applications due to the abundant choice of materials with easily tunable electronic, optical, physical, and chemical properties. These applications are particularly attractive for gas sensing in environmental monitoring and breath analysis. This review gives a systematic description of various gas sensors based on 2D and nanostructured metal sulfide materials. Firstly, the crystal structures of metal sulfides are introduced. Secondly, the gas sensing mechanisms of different metal sulfides based on density functional theory analysis are summarised. Various gas-sensing concepts of metal sulfide-based devices, including chemiresistors, functionalized metal sulfides, Schottky junctions, heterojunctions, field-effect transistors, and optical and surface acoustic wave sensors, are compared and presented. It then discusses the extensive applications of metal sulfide-based sensors for different gas molecules, including volatile organic compounds (i.e., acetone, benzene, methane, formaldehyde, ethanol, and liquefied petroleum gas) and inorganic gas (i.e., CO2, O2, NH3, H2S, SO2, NOx, CH4, H2, and humidity). Finally, a strengths–weaknesses–opportunities–threats (SWOT) analysis is proposed for future development and commercialization in this field.

/pdf/recent-advances-in-2d-nanostructured-metal-sulfide-based-gas-2o0gra3ib0.pdf

Recent advances in 2D/nanostructured metal sulfide-based gas sensors: mechanisms, applications, and perspectives

In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS2) with a sputtered indium–gallium–zi...

Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction.

In-situ growth of Co3O4 nanoparticles based on electrospray for an acetone gas sensor

The high-performance p-type metal-oxide-semiconductor (MOS)-based gas sensor is an important subject of research in the field of gas-sensing technology. In this work, we demonstrated a p-type MOS-based thin-film transistor (TFT) nitrogen dioxide (NO2) gas sensor that used tin oxide (SnOX) for both the channel and sensing layers. The crystalline status, surface morphology, and atomic-bonding configuration of the thin-film were examined using X-ray diffraction, field emission-scanning electron microscopy, and X-ray photoelectron spectroscopy. The results indicated that the deposited thin-film was mainly composed of polycrystalline SnO with a tetragonal structure. The fabricated p-type SnOX TFT showed a maximum response value of 19.4-10 ppm NO2 at room temperature (RT, 25 °C) when operated in the subthreshold region, which was significantly higher than that of 2.8–10 ppm NO2 obtained from a p-type SnOX thin-film chemiresistor at RT. In addition, the SnOX TFT gas sensor showed significantly higher sensitivity to NO2 gas than to other target gases such as NH3, H2S, CO2, and CO at RT. To the best of our knowledge, this is the first study to a p-type MOS-based field-effect transistor-type gas sensor. Our experimental results demonstrate that the p-type SnOX TFT is a promising gas sensor that can operate at RT with high sensitivity and selectivity to NO2 gas.

Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior

GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which improves the directness. Another popular approach is to use a low to moderate Sn content with either compressive strain relaxation or tensile strain engineering, but these strain engineering techniques generally require optical cavities to be suspended in air, which leads to poor thermal management. In this work, we develop a novel dual insulator GeSn-on-insulator (GeSnOI) material platform that is used to produce strain-relaxed GeSn microdisks stuck on a substrate. By undercutting only one insulating layer (i.e., Al2O3), we fabricate microdisks sitting on SiO2, which attain three key properties for a high-performance GeSn laser: removal of harmful compressive strain, decent thermal management, and excellent optical confinement. We believe that an increase in the Sn content of GeSn layers on our platform can allow achieving improved lasing performance.

Strain-relaxed GeSn-on-Insulator (GeSnOI) microdisks

GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that has thus far been introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein, we demonstrate that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the limiting compressive strain while offering excellent thermal conduction. Optical simulations confirm that, despite a relatively small refractive index contrast between GeSn and Si, optical confinement in strain-free GeSn optical cavities on Si is superior to that in conventional strain-free GeSn cavities suspended in the air. Moreover, thermal simulations indicate a negligible temperature increase in our device. Conversely, the temperature in the suspended devices increases substantially reaching, for instance, 120 K at a base temperature of 75 K under the employed optical pumping conditions. Such improvements enable increasing the operation temperature by ~40 K and reducing the lasing threshold by 30%. This approach lays the groundwork to implement new designs in the quest for room temperature GeSn lasers on Si.

Enhanced GeSn Microdisk Lasers Directly Released on Si

https://iopscience.iop.org/article/10.1088/1361-6641/ab2155/pdf

Hyo-Jun Joo

Papers

Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior

Strain-relaxed GeSn-on-Insulator (GeSnOI) microdisks

Enhanced GeSn Microdisk Lasers Directly Released on Si

Improvement of NO2 gas-sensing properties in InGaZnO thin-film transistors by a pre-biasing measurement method