The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

Chemistry and properties of nanocrystals of different shapes.

Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

https://science.sciencemag.org/content/sci/291/5510/1947.full.pdf

Nanobelts of Semiconducting Oxides

Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

/pdf/raman-spectroscopy-as-a-versatile-tool-for-studying-the-54mhwmcfzi.pdf

Raman spectroscopy as a versatile tool for studying the properties of graphene

Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp3 bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and optical transparency. This review will describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of DLCs. The films have widespread applications as protective coatings in areas, such as magnetic storage disks, optical windows and micro-electromechanical devices (MEMs).

/pdf/diamond-like-amorphous-carbon-3pczopr0z7.pdf

Diamond-like amorphous carbon

Every few years, a new material with unique properties emerges and fascinates the scientific community, typical recent examples being high-temperature superconductors and carbon nanotubes. Graphene is the latest sensation with unusual properties, such as half-integer quantum Hall effect and ballistic electron transport. This two-dimensional material which is the parent of all graphitic carbon forms is strictly expected to comprise a single layer, but there is considerable interest in investigating two-layer and few-layer graphenes as well. Synthesis and characterization of graphenes pose challenges, but there has been considerable progress in the last year or so. Herein, we present the status of graphene research which includes aspects related to synthesis, characterization, structure, and properties.

Graphene: The New Two-Dimensional Nanomaterial

Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 μm/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are nearly identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon.

Silicon nanowires prepared by laser ablation at high temperature

We measured first- and second-order Raman scattering in cubic and hexagonal boron nitride using excitation energies in the visible and in the UV. The nonresonant first-order Raman susceptibilities for cubic and hexagonal BN are 1 and $10\phantom{\rule{0.3em}{0ex}}{\mathrm{\AA{}}}^{2}$, respectively. Raman scattering is thus very powerful in detecting the hexagonal phase in mixed thin boron nitride films. In cubic BN the constant Raman sucseptibility in the visible and the UV is due to its indirect band gap. For hexagonal BN a Raman enhancement is found at $5.4\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$. It is well explained by the energy dependence of the dielectric function of hexagonal BN. The second-order spectrum of cubic boron nitride is in excellent agreement with first-principles calculations of the phonon density of states. In hexagonal BN the overbending of the LO phonon is $\ensuremath{\approx}100\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$, five times larger than in graphite.

/pdf/resonant-raman-scattering-in-cubic-and-hexagonal-boron-1x56wmh689.pdf

Resonant Raman scattering in cubic and hexagonal boron nitride

Vertically aligned Mg-doped GaN nanorods have been epitaxially grown on n-type Si substrate to form a heterostructure for fabricating p-n heterojunction photovoltaic cells. The p-type GaN nanorod/n-Si heterojunction cell shows a well-defined rectifying behavior with a rectification ratio larger than 10(4) in dark. The cell has a high short-circuit photocurrent density of 7.6 mAlcm2 and energy conversion efficiency of 2.73% under AM 1.5G illumination at 100 mW/cm2. Moreover, the nanorod array may be used as an antireflection coating for solar cell applications to effectively reduce light loss due to reflection. This study provides an experimental demonstration for integrating one-dimensional nanostructure arrays with the substrate to directly fabricate heterojunction photovoltaic cells.

Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells

Si nanowires grown from silicon oxide

Boron nitride nanotubes (BN-NTs) were synthesized by using excimer laser ablation at 1200 °C in different carrier gases. The main characteristic of the BN-NTs produced by this method is that nanotubes are of only one to three atomic layers thick, which could be attributed to the dominance of the axial growth rate over the radial growth rate. The diameter of the BN-NTs ranged from 1.5 to 8 nm. The tips of the BN-NTs are either a flat cap or of polygonal termination, in contrast to the conical ends of carbon nanotubes. The atomic ratio of boron to nitrogen as measured by means of parallel electron energy loss spectroscopy is 0.8, which is within the experimental error of the stoichiometry of hexagonal BN structure.

/pdf/synthesis-of-boron-nitride-nanotubes-by-means-of-excimer-2k1vyym4dl.pdf

I. Bello

Papers

Silicon nanowires prepared by laser ablation at high temperature

Resonant Raman scattering in cubic and hexagonal boron nitride

Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells

Si nanowires grown from silicon oxide

Synthesis of Boron nitride nanotubes by means of excimer laser ablation at high temperature