Igor Khanonkin

TL;DR: In this article, a short pulse perturbation in a tunneling-injection quantum dot (QD) gain medium is analyzed, and a hybrid state comprising the injection-well and QD first excited state dominate the dynamics with a time constant of 1ps.

TL;DR: In this paper, the charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) optical amplifiers were examined employing the multi-wavelength ultrafast pump-probe measurement technique.

TL;DR: In this article, a bottom-up approach of strain-driven, self-organized epitaxial quantum dot growth was proposed to produce nanoscale species on very large surfaces and interface areas, resulting in the accumulation of a large defect density within the active region and the domination of nonradiative carrier recombination mechanisms.

TL;DR: In this article, an inhomogeneously broadened ensemble of quantum dots, which serve as the gain medium of a semiconductor waveguide operating at room temperature, is demonstrated, and a subfemtosecond-resolution pump-probe scheme reveals a clear oscillatory behavior of the amplitude and instantaneous frequency of the probe pulse.

TL;DR: In this article, the authors describe the tunneling injection process in quantum dot laser and present a detailed electrical characterization of the InP material system, which is correlated to the electro-optic properties.