Ik Su Chun

TL;DR: This work describes materials and fabrication concepts that address many of these challenges of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

TL;DR: A top-down fabrication method that involves the combination of superionic-solid-state-stamping (S4) patterning with metal-assisted-chemical-etching (MacEtch) to produce silicon nanowire arrays with defined geometry and optical properties in a manufacturable fashion is reported.

TL;DR: Using the concept of sacrificial layers and elevation of Au catalyst modulated by growth condition, this work demonstrates for the first time a large area direct transfer process for nanowires formed by a bottom-up approach that can maintain both the position and alignment.

TL;DR: Results reported here provide critical information for precise positioning and uniform large area assembly of semiconducting micro- and nanotubes for applications in photonics, microelectromechanical systems, etc.

TL;DR: This study exploits SLIM's ability to perform topography at a single atomic layer in graphene and extracts the axially averaged refractive index of semiconductor nanotubes and a neurite of a live hippocampal neuron in culture to set the basis for novel high-throughput topography and refractometry of man-made and biological nanostructures.