There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

/pdf/spintronics-fundamentals-and-applications-2dx38n6phu.pdf

Spintronics: Fundamentals and applications

Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.

Spin-torque switching with the giant spin hall effect of tantalum

The effect of an exchange field on the electrical transport in thin films of metallic ferromagnetic manganites has been investigated. The exchange field was induced both by direct exchange coupling in a ferromagnet/antiferromagnet multilayer and by indirect exchange interaction in a ferromagnet/paramagnet metallic superlattice. The electrical resistance of the metallic manganite layers was found to be determined by the magnitude of the vector sum of the effective exchange field and the external magnetic field.

Exchange Field Induced Magnetoresistance in Colossal Magnetoresistance Manganites

We report experimental and theoretical studies of spin wave eigenmodes in transversely magnetized thin film Permalloy wires. Using broadband ferromagnetic resonance technique, we measure the spectrum of spin wave eigenmodes in individual wires as a function of magnetic field and wire width. Comparison of the experimental data to our analytical model and micromagnetic simulations shows that the intrinsic dipolar edge pinning of spin waves is negligible in transversely magnetized wires. Our data also quantify the degree of extrinsic edge pinning in Permalloy wires. This work establishes the boundary conditions for dynamic magnetization in transversely magnetized thin film wires for the range of wire widths and thicknesses studied, and provides a quantitative description of the spin wave eigenmode frequencies and spatial profiles in this system as a function of the wire width.

/pdf/spin-wave-eigenmodes-in-transversely-magnetized-thin-film-bpj5by56bj.pdf

Spin wave eigenmodes in transversely magnetized thin film ferromagnetic wires

Magnetic field induced irreversible changes of the exchange anisotropy in Co/CoO bilayers were investigated. Cobalt films were grown by dc magnetron sputtering and then partially oxidized. They were then field cooled in 7000 Oe to 4.2 K to induce the exchange bias. A variable magnitude magnetic field was applied in the film plane at various angles with respect to the exchange bias direction. The effects of this variable magnetic field on the exchange coupling were studied by the reversible anisotropic magnetoresistance technique. Three qualitatively different behaviors of the exchange anisotropy direction were observed. The particular behavior was determined by the magnitude of the applied magnetic field and the rotation angle. A simple phenomenological model of the exchange anisotropy was developed to explain the experimental results, which allows for explicit quantitative separation of the unidirectional and the rotatable parts of the exchange anisotropy.

Ilya Krivorotov

Papers

Exchange Field Induced Magnetoresistance in Colossal Magnetoresistance Manganites

Spin wave eigenmodes in transversely magnetized thin film ferromagnetic wires

Rotation of exchange anisotropy in biased Co/CoO bilayers

Exchange bias in macroporous Co/CoO

Compensation of nonlinear phase noise in an in-plane-magnetized anisotropic spin-torque oscillator