In-Hyuk Choi

TL;DR: In this paper, two types of titanium nitride (TiN) based nanoelectromechanical systems (NEMS) switches with the smallest dimensions ever made by typical top-down complementary metaloxide-semiconductor (CMOS) fabrication technology were successfully fabricated and electrically characterized.

TL;DR: In this article, an apparatus and method for providing one or more protocols for a single or more electronic devices is presented, which includes establishing, by an electronic device configured to provide a framework interface by executing instructions stored in a memory, one of the physical channels with an external electronic device, using one or multiple communication modules, executing, by the electronic device and two or more application programs to interface with the framework interface, and communicating, via the framework interfaces, data from the two or multiple application programs through the one or several physical channels to the external electronic devices, using at least

TL;DR: In this article, a multibit electro-mechanical memory device consisting of a bit line on the substrate, a first interlayer insulating film on the bit line, first and second lower word lines separated horizontally from each other by a trench, a spacer abutting a sidewall of each of the first and Second Lower Word Lines, a pad electrode inside a contact hole, and two cantilever electrodes suspended over the upper parts of the lower word Lines provided in both sides on the pad electrode.

TL;DR: In this article, two types of two terminal NEMS switch with the smallest dimensions ever made were proposed and fabricated, and their electrical characteristics were provided, and they have robustness under harsh environments such as X-ray, radiation, and low/high temperature.

TL;DR: In this paper, the gate electrode is protruded from the active channel pattern and the mask pattern structures are then removed to form a metal silicide layer, thus completing a semiconductor device having a MOS transistor.