In-jun Hwang

TL;DR: In this article, a power device includes a substrate, a nitride-containing stack on the substrate, and an electric field dispersion unit between the substrate and the first region of the nitridecontaining stack.

TL;DR: Wafer level transient voltage measurement (WLTVM) is suggested in this article to estimate the short circuit capability of AlGaN/GaN HEMT devices, and two groups of samples with similar DC and switching properties but different short circuit capabilities of 4-7 and $>{10}\mu \text{s}$ were evaluated.

TL;DR: In this paper, a dual depletion region (AZ) exists between the source electrode and the drain electrode in a high electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same.

TL;DR: In this article, a transistor includes a channel layer on a substrate, a first channel supply layer on the channel, a depletion layer, a second Channel supply layer, source and drain electrodes on the first channel, and a gate electrode on the depletion layer.

TL;DR: In this article, the role of fluorine (F) in GaN-based high electron mobility transistors (HEMTs) with first principle calculations is investigated, and the degradation of device performance at high temperature is ascribed to the defect energy state near conduction band edge of FN.