Journal ArticleDOI
Estimation of Short Circuit Capability of GaN HEMTs Using Transient Measurement
In-jun Hwang,Soogine Chong,Dong-Chul Shin,Sun-Kyu Hwang,Young-Hwan Park,Bo-Ram Kim,Joonyong Kim,Jae-joon Oh,Jun Hyuk Park,Min Chul Yu,Woo-Chul Jeon,Jai-Kwang Shin,Jongseob Kim +12 more
TLDR
Wafer level transient voltage measurement (WLTVM) is suggested in this article to estimate the short circuit capability of AlGaN/GaN HEMT devices, and two groups of samples with similar DC and switching properties but different short circuit capabilities of 4-7 and $>{10}\mu \text{s}$ were evaluated.Abstract:
Wafer level transient voltage measurement (WLTVM) to estimate the short circuit capability of AlGaN/GaN HEMT devices is suggested. Two groups of samples with similar DC and switching properties but different short circuit capabilities of 4-7 and $>{10}\mu \text{s}$ were evaluated. The extracted junction temperature and the measured saturation/linear current under repeated short circuit stresses suggest that the short circuit failure is attributed to the degradation in the drift region. The WLTVM could measure the transient potential change along the drift region during short circuit condition. The sample with lower short-circuit survivability showed a faster propagation of the high field traveling from the gate to the drain. The time the high electric field reaches the drain coincides with the time of the short circuit failure. In addition to providing the insight into the short circuit failure mechanism, wafer-level method can provide a quick and non-destructive evaluation of the short circuit capability before packaging devices.read more
Citations
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Journal ArticleDOI
Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET
Ruizhe Zhang,Jingcun Liu,Qiang Li,Subhash Pidaparthi,Andrew P. Edwards,Clifford I. Drowley,Yuhao Zhang +6 more
TL;DR: In this paper , a vertical GaN fin-channel junction-gate field effect transistor (Fin-JFET) was used for short-circuit robustness in automotive powertrains.
Proceedings ArticleDOI
Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage
TL;DR: In this paper , the authors presented a comprehensive device physics-based study of the GaN Fin-JFET under short-circuit conditions, particularly at a bus voltage close to BV.
Exceptional Repetitive-Short-Circuit Robustness of Vertical GaN Fin-JFET at High Voltage
R. Zhang,J. Z. Liu,Q. S. Li,Subhash Pidaparthi,Andrew P. Edwards,Clifford I. Drowley,Yu Zhang +6 more
TL;DR: In this article , a GaN Fin-JFET with a short circuit withstanding time of over 30 µs at 400 V bus voltage (VBUS) and at a 600 V VBUS, it survived over 8,000 cycles of 10 µs SC stresses before an open-circuit failure.
Proceedings ArticleDOI
Exceptional Repetitive-Short-Circuit Robustness of Vertical GaN Fin-JFET at High Voltage
TL;DR: In this article , a GaN Fin-JFET with a short circuit withstanding time of over 30 µs at 400 V bus voltage was presented, which is the first report of an exceptional repetitive SC robustness in a power transistor at a V BUS close to its rated voltage.
Journal ArticleDOI
Study of short-circuit robustness of p-GaN and cascode transistors
TL;DR: In this article , the results of >160 destructive tests performed on commercially available 600 V and 650 V GaN HEMT transistors from four different manufacturers with different structures (p-GaN and cascode).
References
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Journal ArticleDOI
Dynamic on -State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
TL;DR: In this paper, a dynamic R DSON test board integrating both hard-and soft-switching test circuits is built, and two types of commercial GaN devices are tested and compared under hard and soft switching conditions by doublepulse and multipulse test modes, respectively.
Journal ArticleDOI
Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
In-jun Hwang,Jongseob Kim,Soogine Chong,Hyun-Sik Choi,Sun-Kyu Hwang,Jae-joon Oh,Jai-Kwang Shin,U-In Chung +7 more
TL;DR: In this paper, the authors studied the current collapse phenomenon during switching in p-GaN gate AlGaN/GaN high-electron-mobility transistors and found that channel hot electrons play a major role in increasing current collapse and that adding a field plate significantly reduces the effect.
Proceedings ArticleDOI
Reliability of hybrid-drain-embedded gate injection transistor
Kenichiro Tanaka,Tatsuo Morita,Masahiro Ishida,Tsuguyasu Hatsuda,Tetsuzo Ueda,Kazuki Yokoyama,Ayanori Ikoshi,Masahiro Hikita,Masahiro Toki,Manabu Yanagihara,Yasuhiro Uemoto +10 more
TL;DR: In this paper, a high-temperature reverse bias test on a hybrid-drain-embedded gate injection transistor (HD-GIT) is performed, which reveals that the lifetime is dependent on the leakage current before the reliability test and that the hole injection from the p-type GaN embedded in the drain plays an important role to suppress the degradation.
Journal ArticleDOI
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching
TL;DR: In this paper, the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching were studied. And the results suggest that the BV and over voltage margin of HEMTs in practical power switching can be significantly underestimated using the static BV.
Proceedings ArticleDOI
Dynamic Breakdown Voltage of GaN Power HEMTs
TL;DR: In this paper, the transient breakdown voltage (BV) of a non-avalanche device in ultra-short pulses was measured based on the unclamped inductive switching (UIS) setup.