Reducing non-radiative recombination in semiconducting materials is a prerequisite for achieving the highest performance in light-emitting and photovoltaic applications. Here, we characterize both external and internal photoluminescence quantum efficiency and quasi-Fermi-level splitting of surface-treated hybrid perovskite (CH3NH3PbI3) thin films. With respect to the material bandgap, these passivated films exhibit the highest quasi-Fermi-level splitting measured to date, reaching 97.1 ± 0.7% of the radiative limit, approaching that of the highest performing GaAs solar cells. We confirm these values with independent measurements of internal photoluminescence quantum efficiency of 91.9 ± 2.7% under 1 Sun illumination intensity, setting a new benchmark for these materials. These results suggest hybrid perovskite solar cells are inherently capable of further increases in power conversion efficiency if surface passivation can be combined with optimized charge carrier selective interfaces. Surface treatment is shown to yield passivated perovskite films with very high quasi-Fermi level splitting and internal photoluminescence quantum efficiency, indicating that further improvements in the performance of perovskite optoelectronics should be feasible.

Hybrid perovskite films approaching the radiative limit with over 90% photoluminescence quantum efficiency

Properties of Ga2O3 thin films deposited by electron‐beam evaporation from a high‐purity single‐crystal Gd3Ga5O12 source are reported. As‐deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≊100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to ...

Ga2O3 films for electronic and optoelectronic applications

We have discovered that a class of inorganic sulfides [Li2S, (NH4)2S, Na2S⋅9H2O, etc.] imparts excellent electronic properties to GaAs surfaces. The surface recombination velocity at the interface between Na2S⋅9H2O and GaAs begins to approach that of the nearly ideal AlGaAs/GaAs interface. We propose the formation of a robust covalently bonded sulfide layer to explain the favorable electronic quality of such interfaces.

Nearly ideal electronic properties of sulfide coated GaAs surfaces

The passivating effects of spin‐coated films of Na2S⋅9H2O on GaAs surfaces have been studied using room‐temperature photoluminescence (PL) and low‐temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n‐ and p‐type material; improvements of up to 2800× are observed. The surface field and surface recombination‐related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.

Effects of passivating ionic films on the photoluminescence properties of GaAs

Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) and their prospects for application in various areas are discussed. The microwave and digital performance status of HBTs is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted. >

GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

With a simple chemical treatment we have passivated nonradiative recombination centers at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor, resulting in a 60‐fold increase in the current gain of the device at low collector currents. This large enhancement in gain was achieved by spin coating thin films of Na2S9H2O onto the devices after their fabrication. We briefly discuss the passivation mechanism and the implications for other III‐V optoelectronic devices.

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

InGaAs/InP double-heterostructure bipolar transistors (DHBT's) with current gain β ∼ 630 have been realized using gas-source molecular beam epitaxy (GSMBE). These devices exhibit near-ideal β versus I C characteristic (i.e., β independent of I C ) with a small-signal gain h_{fe} \sim 180 at I_{C} \sim 2 nA. In comparison, we find \beta \sim I_{C}^{0.5} for a high-quality AlGaAs/GaAs HBT grown by OMCVD. The higher emitter injection efficiency at low collector current levels found in the InGaAs/InP DHBT is due to at least a factor 100 smaller surface recombination current.

InGaAs/InP double-heterostructure bipolar transistors with near-ideal &#946; versus I C characteristic

Double-heterostructure InGaAs(P)/InP bipolar transistors ranging in emitter size from 5 × 10 to 100 × 150 µm2have been fabricated using a non-self-aligned technology. These transistors exhibit current gains as high as 275 independent of emitter perimeter-to-area ratio. The best frequency of unity current gain was measured in the smallest devices to be 18 GHz. The high-frequency operation was mainly limited by the emitter charging time.

J.C. Bischoff

Papers

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I C characteristic

High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

IVA-4 dramatic enhancement in the gain of AlGaAs/GaAs heterostructure bipolar transistors by surface passivation

Dramatic enhancement in the gain of algaas/gaas heterostructure bipolar transistors by surface passivation.

J.C. Bischoff

Papers

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

InGaAs/InP double-heterostructure bipolar transistors with near-ideal &#946; versus I C characteristic

High-speed InGaAs(P)/InP double-heterostructure bipolar transistors

IVA-4 dramatic enhancement in the gain of AlGaAs/GaAs heterostructure bipolar transistors by surface passivation

Dramatic enhancement in the gain of algaas/gaas heterostructure bipolar transistors by surface passivation.

InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I C characteristic