Journal ArticleDOI
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
TLDR
In this paper, a passivated nonradiative recombination center at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor was proposed to increase the current gain of the device at low collector currents.Abstract:
With a simple chemical treatment we have passivated nonradiative recombination centers at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor, resulting in a 60‐fold increase in the current gain of the device at low collector currents. This large enhancement in gain was achieved by spin coating thin films of Na2S9H2O onto the devices after their fabrication. We briefly discuss the passivation mechanism and the implications for other III‐V optoelectronic devices.read more
Citations
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Journal ArticleDOI
Hybrid perovskite films approaching the radiative limit with over 90% photoluminescence quantum efficiency
Ian L. Braly,Dane W. deQuilettes,Luis M. Pazos-Outón,Sven Burke,Mark E. Ziffer,David S. Ginger,Hugh W. Hillhouse +6 more
TL;DR: In this article, the authors characterize both external and internal photoluminescence quantum efficiency and quasi-Fermi-level splitting of surface-treated hybrid perovskite (CH3NH3PbI3) thin films.
Journal ArticleDOI
Ga2O3 films for electronic and optoelectronic applications
M. Passlack,Erdmann Frederick Schubert,W. S. Hobson,Minghwei Hong,N. Moriya,S. N. G. Chu,K. Konstadinidis,Joseph Petrus Mannaerts,M. L. Schnoes,G. J. Zydzik +9 more
TL;DR: In this article, the properties of Ga2O3 thin films deposited by electron-beam evaporation from a high-purity single-crystal Gd3Ga5O12 source are reported.
Journal ArticleDOI
Nearly ideal electronic properties of sulfide coated GaAs surfaces
TL;DR: In this paper, a robust covalently bonded sulfide layer was proposed to explain the favorable electronic properties of GaAs/GaAs interfaces, and the surface recombination velocity at the interface between Na2S⋅9H2O and GaAs began to approach that of the nearly ideal AlGaAs/GAAs interface.
Journal ArticleDOI
Effects of passivating ionic films on the photoluminescence properties of GaAs
TL;DR: In this paper, the passivating effects of spincoated films of Na2S⋅9H2O on GaAs surfaces have been studied using roomtemperature photoluminescence (PL) and low-temperature PL spectroscopy.
Journal ArticleDOI
GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
TL;DR: The microwave and digital performance status of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) is reviewed in this paper, where the maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported.
References
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Book
Physics and technology of semiconductor devices
TL;DR: The Planar Technology of Semiconductor Surfaces is described in this article, where it is shown that the planar planar technology can be used to model the surface effects on p-n junction transistors.
Journal ArticleDOI
Unpinned (100) GaAs surfaces in air using photochemistry
S. D. Offsey,Jerry M. Woodall,A. C. Warren,Peter D. Kirchner,T. I. Chappell,George David Pettit +5 more
TL;DR: In this article, the Fermi level at the surface of both n and p-type (100) GaAs in air was unpinned by light-induced photochemistry between GaAs and water.
Journal ArticleDOI
On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
Hideki Hasegawa,T. Sawada +1 more
TL;DR: In this article, a surface disorder model is proposed to explain all the dynamic anomalies in anodic native oxide/GaAs metal/oxide/semiconductor samples and anodic Al2O3/InP MIS samples.
Journal ArticleDOI
GaAs metallization: Some problems and trends
Jerry M. Woodall,John L. Freeouf +1 more
TL;DR: Ohmic and Schottky barrier contacts with desired properties are difficult to form on GaAs devices due to the fact that the position of the Fermi energy is loosely "pinned" near midgap for GaAs surfaces which are metallized using conventional techniques.
Journal ArticleDOI
Reduction of GaAs surface recombination velocity by chemical treatment
R. J. Nelson,J. S. Williams,H. J. Leamy,Barry Miller,H. C. Casey,Bruce A. Parkinson,A. Heller +6 more
TL;DR: In this paper, it was shown that ruthenium ions on the surface of n-GaAs decrease the surface recombination velocity of electrons and holes from 5×105 to 3.5×104 cm/sec.